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DTC144EE PDF预览

DTC144EE

更新时间: 2024-11-02 12:26:15
品牌 Logo 应用领域
TSC 晶体信号二极管晶体管开关光电二极管
页数 文件大小 规格书
2页 201K
描述
NPN Small Signal Transistor Small Signal Diode

DTC144EE 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.08
Is Samacsys:NBase Number Matches:1

DTC144EE 数据手册

 浏览型号DTC144EE的Datasheet PDF文件第2页 
DTC144 EM/EE/EUA/ECA/ESA  
NPN Small Signal Transistor  
Small Signal Diode  
Features  
—Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
—The bias resistors consist of thin -film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
—Only the on/off conditions need to be set for  
operation,marking device design easy.  
— Green compound (Halogen free) with suffix "G" on  
packing code and prefix "G" on date code.  
Ordering Information  
Part No.  
DTC144 EM  
DTC144 EE  
DTC144 EUA  
DTC144 ECA  
DTC144 ESA  
Package  
SOT-723  
SOT-523  
SOT-323  
SOT-23  
Packing  
8K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
3K / 7" Reel  
Marking  
26  
26  
26  
26  
TO-92S  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Value  
EUA ECA  
200  
50  
Type Number  
Power Dissipation  
Symbol  
Units  
EM  
ESA  
300  
EE  
150  
PD  
VCC  
VIN  
100  
mW  
V
Supply Voltage  
Input Voltage  
-1040  
30  
V
IO  
Output Current  
mA  
IC(MAX)  
100  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Notes:1. Valid provided that electrodes are kept at ambient temperature  
Parameter  
Symbol Min Typ  
Max  
Condtion  
VO=0.3V,IO=2 mA  
CC=5V,IO=100µA  
Unit  
VI(on)  
3
V
Input Voltage  
VI(off)  
0.5  
V
V
IO/II=10mA/0.5mA  
VI=5V  
Output Voltage  
VO(on)  
0.3  
Input Current  
II  
0.18  
mA  
VCC=50V,VI=0  
VO=5V,IO=5mA  
Output Current  
IOoff)  
0.5  
μA  
DC Current Gain  
Input Resistance  
GI  
68  
R1  
32.9  
47  
1
61.1  
1.2  
KΩ  
Resistance Ratio  
R2/R1  
fT  
0.8  
VO=10V,IO=5mA,f=100MHz  
Transition Frequency  
250  
MHz  
Version:A12  

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