Datasheet > 晶体管 > 小信号双极晶体管> DTC143ZE3 (新产品)

DTC143ZE3 (新产品)

更新时间： 2024-12-02 11:07:43

品牌	Logo	应用领域
罗姆 - ROHM		小信号双极晶体管
页数	文件大小	规格书
3页	72K
描述
DTC143ZE3 is a digital transistor suitable for inverter, interface and driver applications.

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DTC143ZE3 (新产品) 数据手册

Transistors

DTC143ZEB

100mA / 50V Digital transistors

(with built-in resistors)

DTC143ZEB

zApplications

zDimensions (Unit : mm)

Inverter, Interface, Driver

EMT3F

1.6

0.7

zFeatures

0.26

(3)

1) Built-in bias resistors enable the configuration of

an inverter circuit without connecting external

input resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors

with complete isolation to allow negative biasing

of the input. They also have the advantage of

almost completely eliminating parasitic effects.

3) Only the on/off conditions need to be set for

operation, making the device design easy.

(1)

0.5 0.5

1.0

(2)

0.13

Each lead has same dimensions

(1) IN

(2) GND

(3) OUT

Abbreviated symbol : E23

zStructure

zEquivalent circuit

NPN silicon epitaxial planar transistor type

(Resistor built-in)

OUT

zPackaging specifications

GND

OUT

Package

EMT3F

Taping

Packaging type

Code

Part No.

Basic ordering unit (pieces)

3000

GND

DTC143ZEB

R1=4.7kΩ, R2=47kΩ

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Supply voltage

Input voltage

−5 to +30

Collector current

Output current

Ic(max) ^∗1

100

°C

∗2

Power dissipation

Junction temperature

150

Tstg

150

Storage temperature

−55 to +150

°C

∗1 Characteristics of built-in transistor

∗2 Each terminal mounted on a recommended land

1/2

12 3

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