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DTC143ZET1 PDF预览

DTC143ZET1

更新时间: 2024-02-06 22:50:10
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关光电二极管
页数 文件大小 规格书
12页 191K
描述
NPN SILICON BIAS RESISTOR TRANSISTORS

DTC143ZET1 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:SC-75包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:0.95
Samacsys Confidence:2Samacsys Status:Released
Samacsys PartID:411197Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SC-75 SOT-416 CASE 463-01 ISSUE FSamacsys Released Date:2018-02-26 20:21:44
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTC143ZET1 数据手册

 浏览型号DTC143ZET1的Datasheet PDF文件第2页浏览型号DTC143ZET1的Datasheet PDF文件第3页浏览型号DTC143ZET1的Datasheet PDF文件第4页浏览型号DTC143ZET1的Datasheet PDF文件第5页浏览型号DTC143ZET1的Datasheet PDF文件第6页浏览型号DTC143ZET1的Datasheet PDF文件第7页 
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC–75/SOT–416 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR  
TRANSISTORS  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
COLLECTOR  
3
The SC–75/SOT–416 package can be soldered using  
wave or reflow. The modified gull–winged leads absorb  
thermal stress during soldering eliminating the possibility  
of damage to the die.  
1
BASE  
2
EMITTER  
Available in 8 mm, 7 inch/3000 Unit Tape & Reel  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
3
V
CBO  
V
CEO  
50  
Vdc  
2
1
I
C
100  
mAdc  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
CASE 463  
SOT–416/SC–75  
STYLE 1  
DTC114EET1  
DTC124EET1  
DTC144EET1  
DTC114YET1  
DTC143TET1  
DTC123EET1  
DTC143EET1  
DTC143ZET1  
DTC124XET1  
DTC123JET1  
8A  
8B  
8C  
8D  
8F  
8H  
8J  
8K  
8L  
8M  
10  
22  
47  
10  
22  
47  
47  
2.2  
4.7  
47  
47  
47  
3000/Tape & Reel  
10  
4.7  
2.2  
4.7  
4.7  
22  
2.2  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
DTC114EET1/D  
May, 2000 – Rev. 0  

DTC143ZET1 替代型号

型号 品牌 替代类型 描述 数据表
DTC143ZET1G ONSEMI

类似代替

Bias Resistor Transistor
DTC143ZE ONSEMI

功能相似

Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k

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