Datasheet > DTC114YSA-MORSG

DTC114YSA-MORSG

更新时间： 2024-02-27 07:06:28

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	795K
描述
NPN Small Signal Transistor

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DTC114YSA-MORSG 数据手册

DTC114 YCA/YSA/YE/YUA

Taiwan Semiconductor

Small Signal Product

NPN Small Signal Transistor

FEATURES

- Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit).

- The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

- Only the on/off conditions need to be set for

operation, marking device design easy.

- Packing code with suffix "G" means

green compound (halogen-free)

Equivalent Circuit

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

YUA / YCA

200

SYMBOL

UNIT

YSA

300

Power Dissipation

Supply Voltage

Input Voltage

P_D

V_CC

150

V_IN

-6 ～ +40

I_O

Output Current

°C

I_C(MAX)

T_J, T_STG

100

Junction and Storage Temperature Range

-55 to + 150

Notes: 1. Valid provided that electrodes are kept at ambient temperature

PARAMETER

CONDITION

V_O=0.3V,I_O=1mA

V_CC=5V,I_O=100μA

I_O/I_I=5mA/0.25mA

V_I=5V

SYMBOL

V_I(on)

V_I(off)

V_O(on)

I_I

MIN

TYP

MAX

1.4

UNIT

0.3

Input Voltage

Output Voltage

Input Current

0.3

0.88

0.5

μA

V_CC=50V,V_I=0

V_O=5V,I_O=5mA

Output Current

I_O（off)

G_I

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

R₁

4.7

250

5.7

KΩ

R₂/R₁

f_T

3.7

V_O=10V,I_O=5mA,f=100MHz

MHz

Document Number: DS_S1412025

Version: B14

12 3 4

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