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DTC114YUA

更新时间: 2024-02-28 20:37:40
品牌 Logo 应用领域
TSC 晶体管
页数 文件大小 规格书
4页 795K
描述
NPN Small Signal Transistor

DTC114YUA 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownBase Number Matches:1
类别:二极管极性:NPN
V(BR)CEO (V) min.:50IC Continuous (mA):70
Gi:68VO(ON) (V):0.3
fT MHz:250(typ)R1 (kΩ):10
R2 (kΩ):47R1/R2 typ:0.21
Vi(off) (V) max.:0.3Vi(on) (V) min.:1.4
PD (mW):200AEC Qualified:No
最高工作温度:150最低工作温度:-55
MSL等级:1生命周期:Active
是否无铅:Yes符合Reach:Yes
符合RoHS:YesECCN代码:EAR99
Package Outlines:SOT-323

DTC114YUA 数据手册

 浏览型号DTC114YUA的Datasheet PDF文件第2页浏览型号DTC114YUA的Datasheet PDF文件第3页浏览型号DTC114YUA的Datasheet PDF文件第4页 
DTC114 YCA/YSA/YE/YUA  
Taiwan Semiconductor  
Small Signal Product  
NPN Small Signal Transistor  
FEATURES  
- Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistor  
(see equivalent circuit).  
- The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
- Only the on/off conditions need to be set for  
operation, marking device design easy.  
- Packing code with suffix "G" means  
green compound (halogen-free)  
Equivalent Circuit  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
PARAMETER  
VALUE  
YUA / YCA  
200  
SYMBOL  
UNIT  
YE  
YSA  
300  
Power Dissipation  
Supply Voltage  
Input Voltage  
PD  
VCC  
150  
mW  
V
50  
VIN  
-6 +40  
70  
V
IO  
Output Current  
mA  
°C  
IC(MAX)  
TJ, TSTG  
100  
Junction and Storage Temperature Range  
-55 to + 150  
Notes: 1. Valid provided that electrodes are kept at ambient temperature  
PARAMETER  
CONDITION  
VO=0.3V,IO=1mA  
VCC=5V,IO=100μA  
IO/II=5mA/0.25mA  
VI=5V  
SYMBOL  
VI(on)  
VI(off)  
VO(on)  
II  
MIN  
TYP  
-
MAX  
1.4  
UNIT  
-
0.3  
-
Input Voltage  
V
-
-
-
Output Voltage  
Input Current  
0.3  
0.88  
0.5  
-
V
-
-
mA  
μA  
VCC=50V,VI=0  
VO=5V,IO=5mA  
-
Output Current  
IOoff)  
GI  
-
-
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
68  
7
-
R1  
10  
4.7  
250  
13  
5.7  
-
KΩ  
R2/R1  
fT  
-
3.7  
-
VO=10V,IO=5mA,f=100MHz  
MHz  
Document Number: DS_S1412025  
Version: B14  

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