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DTA143ZUB PDF预览

DTA143ZUB

更新时间: 2024-11-20 06:54:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体数字晶体管
页数 文件大小 规格书
3页 95K
描述
-100mA / -50V Digital transistors

DTA143ZUB 数据手册

 浏览型号DTA143ZUB的Datasheet PDF文件第2页浏览型号DTA143ZUB的Datasheet PDF文件第3页 
Transistors  
!
! ! ! ! ! ! ! ! DTA143ZUB  
! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! !  
-100mA / -50V Digital transistors  
(with built-in resistors)  
DTA143ZUB  
zApplications  
zDimensions (Unit : mm)  
Inverter, Interface, Driver  
UMT3F  
2.0  
0.9  
zFeatures  
0.32  
(3)  
1) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see equivalent circuit).  
2) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
almost completely eliminating parasitic effects.  
3) Only the on/off conditions need to be set for  
operation, making the device design easy.  
(1)  
0.65 0.65  
1.3  
(2)  
0.13  
Each lead has same dimensions  
(1) IN  
(2) GND  
(3) OUT  
Abbreviated symbol : 113  
zStructure  
zEquivalent circuit  
PNP silicon epitaxial planar transistor type  
(Resistor built-in)  
OUT  
R1  
IN  
R2  
zPackaging specifications  
GND(+)  
Package  
UMT3F  
Taping  
TL  
Packaging type  
Code  
OUT  
IN  
Part No.  
Basic ordering unit (pieces)  
3000  
GND(+)  
DTA143ZUB  
R1  
=4.7kΩ, R =47kΩ  
2
zAbsolute maximum ratings (Ta=25qC)  
Parameter  
Symbol  
Limits  
Unit  
Supply voltage  
V
CC  
IN  
C(max.)  
50  
30 to +5  
100  
V
V
Input voltage  
V
1  
Collector current  
I
mA  
mA  
mW  
°C  
Output current  
I
O
100  
2  
Power dissipation  
Junction temperature  
Range of storage temperature  
P
D
200  
Tj  
Tstg  
150  
55 to +150  
°C  
1 Characteristics of built-in transistor  
2 Each terminal mounted on a recommended land  
1/2  

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