Datasheet > DTA144ECA

DTA144ECA

更新时间： 2024-11-02 12:56:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	212K
描述
PNP Small Signal Transistor

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技术参数
数据手册

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DTA144ECA 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

DTA144ECA 数据手册

DTA144 EM/EE/EUA/ECA/ESA

PNP Small Signal Transistor

Small Signal Product

Features

Equivalent Circuit

◇ Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit).

◇ The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

◇ Only the on/off conditions need to be set for

operation, marking device design easy.

◇ Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code.

Ordering Information (example)

Packing code

(Green)

Part No.

Package

SOT-723

Packing

Packing code

Marking Manufacture code

RMG

DTA144 EM

8K / 7" Reel

Note : Detail please see "Ordering Information(detail, example)" below.

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Value

Symbol

Unit

Parameter

EUA / ECA

200

ESA

300

Power Dissipation

P_D

V_CC

100

150

Supply Voltage

-50

Input Voltage

V_IN

-40 ~ +10

-100

Output Current

I_O

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to + 150

Notes : 1. Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Condtion

Symbol

Min

Typ

Max

Unit

Parameter

V_CC= -5V, I_O= -100μA

V_O= -0.3V, I_O= -2mA

I_O/ I_I= -10mA / -0.5mA

V_I= -5V

V_I(off)

-0.5

Input Voltage

V_I(on)

V_O(on)

I_I

I_O（off)

G_I

-3

Output Voltage

Input Current

-0.3

-0.18

-0.5

μA

V_CC= -50V, V_I=0

Output Current

V_O= -5V, I_O= -10mA

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

32.9

0.8

R₁

61.1

1.2

KΩ

R₂/R₁

f_T

V_O= -10V, I_O= -5mA, f=100MHz

250

MHz

Version : B13

12 3

中文翻译

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