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DTA143Z

更新时间: 2024-01-21 20:09:02
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
8页 169K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

DTA143Z 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.57
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

DTA143Z 数据手册

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Preferred Devices  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the TO–92  
package which is designed for through hole applications.  
http://onsemi.com  
PNP SILICON  
BIAS RESISTOR  
TRANSISTOR  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
2
V
CBO  
BASE  
V
CEO  
50  
Vdc  
1
I
C
100  
mAdc  
EMITTER  
Total Power Dissipation  
P
D
(1.)  
@ T = 25°C  
350  
mW  
A
Derate above 25°C  
2.81  
mW/°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to  
Ambient (surface mounted)  
R
357  
°C/W  
θ
JA  
1
Operating and Storage  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
2
3
Maximum Temperature for  
Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
CASE 29  
TO–92 (TO–226)  
STYLE 1  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
5000/Box  
DTA114E  
DTA124E  
DTA144E  
DTA114Y  
DTA114T  
DTA143T  
DTB113E  
DTA123E  
DTA143E  
DTA143Z  
DTA114E  
DTA124E  
DTA144E  
DTA114Y  
DTA114T  
DTA143T  
DTB113E  
DTA123E  
DTA143E  
DTA143Z  
10  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
10  
22  
47  
47  
Preferred devices are recommended choices for future use  
and best overall value.  
1.0  
2.2  
4.7  
47  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 0  
DTA114E/D  

DTA143Z 替代型号

型号 品牌 替代类型 描述 数据表
DTA143ZET1G ONSEMI

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