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DTA124ERLRM PDF预览

DTA124ERLRM

更新时间: 2024-11-13 13:07:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
8页 169K
描述
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226, 3 PIN, BIP General Purpose Small Signal

DTA124ERLRM 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.21
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):60
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

DTA124ERLRM 数据手册

 浏览型号DTA124ERLRM的Datasheet PDF文件第2页浏览型号DTA124ERLRM的Datasheet PDF文件第3页浏览型号DTA124ERLRM的Datasheet PDF文件第4页浏览型号DTA124ERLRM的Datasheet PDF文件第5页浏览型号DTA124ERLRM的Datasheet PDF文件第6页浏览型号DTA124ERLRM的Datasheet PDF文件第7页 
Preferred Devices  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the TO–92  
package which is designed for through hole applications.  
http://onsemi.com  
PNP SILICON  
BIAS RESISTOR  
TRANSISTOR  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
2
V
CBO  
BASE  
V
CEO  
50  
Vdc  
1
I
C
100  
mAdc  
EMITTER  
Total Power Dissipation  
P
D
(1.)  
@ T = 25°C  
350  
mW  
A
Derate above 25°C  
2.81  
mW/°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to  
Ambient (surface mounted)  
R
357  
°C/W  
θ
JA  
1
Operating and Storage  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
2
3
Maximum Temperature for  
Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
CASE 29  
TO–92 (TO–226)  
STYLE 1  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
5000/Box  
DTA114E  
DTA124E  
DTA144E  
DTA114Y  
DTA114T  
DTA143T  
DTB113E  
DTA123E  
DTA143E  
DTA143Z  
DTA114E  
DTA124E  
DTA144E  
DTA114Y  
DTA114T  
DTA143T  
DTB113E  
DTA123E  
DTA143E  
DTA143Z  
10  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
10  
22  
47  
47  
Preferred devices are recommended choices for future use  
and best overall value.  
1.0  
2.2  
4.7  
47  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 0  
DTA114E/D  

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