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DTA124ECA-TP-HF PDF预览

DTA124ECA-TP-HF

更新时间: 2024-02-08 10:21:29
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管数字晶体管
页数 文件大小 规格书
3页 209K
描述
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-3

DTA124ECA-TP-HF 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.59
Is Samacsys:N其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 2.1
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):68
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTA124ECA-TP-HF 数据手册

 浏览型号DTA124ECA-TP-HF的Datasheet PDF文件第2页浏览型号DTA124ECA-TP-HF的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
DTA124ECA  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
·
Epoxy meets UL 94 V-0 flammability rating  
·
Moisure Sensitivity Level 1  
Built-in bias resistors enable the configuration of an inverter circuit  
without connecting external input resistors  
PNP  
Digital Transistors  
The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have the  
advantage of almost completely eliminating parasitic effects.  
Only the on/off conditions need to be set for operation, making  
device design easy  
SOT-23  
A
Absolute maximum ratings @ 25R  
D
Symbol  
VCC  
VIN  
Parameter  
Supply voltage  
Input voltage  
Min  
---  
-40  
Typ  
-50  
---  
Max  
---  
10  
Unit  
V
V
3
1. IN  
2. GND  
3. OUT  
B
C
IO  
IC(MAX)  
Pd  
Tj  
-30  
-100  
200  
150  
---  
1
Output current  
---  
---  
mA  
2
Power dissipation  
Junction temperature  
Storage temperature  
---  
---  
---  
---  
mW  
?
F
E
Tstg  
-55  
150  
?
H
G
J
Electrical Characteristics @ 25R  
K
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Parameter  
Min  
---  
-3.0  
---  
---  
---  
56  
15.4  
0.8  
Typ  
---  
---  
---  
---  
---  
---  
22  
1.0  
Max  
-0.5  
---  
-0.3  
-0.36  
-0.5  
---  
Unit  
V
V
DIMENSIONS  
Input voltage (VCC=-5V, IO=-100IA)  
(VO=-0.2V, IO=-5mA)  
INCHES  
MIN  
MM  
Output voltage (IO/II=-10mA/-0.5mA  
Input current (VI=-5V)  
V
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
mA  
IA  
IO(off)  
GI  
R1  
Output current (VCC=-50V, VI=0)  
DC current gain (VO=-5V, IO=-5mA)  
Input resistance  
28.6  
1.2  
K=  
F
R2/R1  
Resistance ratio  
G
H
J
Transition frequency  
(VCE=-10V, IE=5mA, f=100MHz)  
fT  
---  
250  
---  
MHz  
.085  
.37  
K
Suggested Solder  
Pad Layout  
*Marking: 15  
.031  
.800  
.035  
.900  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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