Datasheet > DTA124EE

DTA124EE

更新时间： 2024-09-24 12:49:19

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	201K
描述
PNP Small Signal Transistor

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中文翻译

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技术参数
数据手册

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DTA124EE 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.58
Is Samacsys：	N	Base Number Matches：	1

DTA124EE 数据手册

CREAT BY ART

DTA124 EM/EE/EUA/ECA/ESA

PNP Small Signal Transistor

Small Signal Product

Features

◇Built-in bias resistors enable the configuration of an inverter

circuit without connecting external input resistor

(see equivalent circuit)

Equivalent Circuit

◇The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

◇Only the on/off conditions need to be set for

operation, marking device design easy.

◇Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code.

Ordering Information (example)

Packing code

(Green)

Part No.

Package

SOT-723

Packing

Packing code

Marking

Manufacture code

DTA124 EM

8K / 7" Reel

RMG

Note : Detail please see "Ordering Information(detail, example)" below.

Maximum Ratings and Electrical Characteristics

Rating at 25^oC ambient temperature unless otherwise specified.

Maximum Ratings

Value

Symbol

Units

Parameter

EUA

ECA

ESA

P_D

V_CC

Power Dissipation

200

100

150

300

Supply Voltage

-50

V_IN

Input Voltage

-40 ~ +10

-30

I_O

Output Current

^oC

T_J, T_STG

Junction and Storage Temperature Range

- 55 to + 150

Note 1：Valid provided that electrodes are kept at ambient temperature

Electrical Characteristics

Symbol

Condtion

Min

Typ

Max

Units

Parameter

V_I(off)

V_CC= -5V, I_O= -100μA

-0.5

Input Voltage

V_I(on)

V_O(on)

I_I

V_O= -0.2V, I_O= -5mA

-3

I_O/ I_I= -10mA / -0.5mA

V_I=-5V

Output Voltage

Input Current

-0.3

-0.36

-0.5

μA

I_O(off)

G_I

V_CC= -50V, V_I=0

V_O= -5V, I_O= -5mA

Output Current

DC Current Gain

Input Resistance

Resistance Ratio

Transition Frequency

15.4

0.8

28.6

1.2

KΩ

R₂/R₁

f_T

V_O= -10V,I_O= -5mA, f=100MHz

250

MHz

Version：C13

12 3

中文翻译

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