是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-92 | 包装说明: | CASE 29-11, TO-226, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.31 |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 8 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
DTA123EET1G | ONSEMI |
类似代替 |
Bias Resistor Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTA123E_11 | UTC |
获取价格 |
DIGITAL TRANSISTORS | |
DTA123E_15 | UTC |
获取价格 |
DIGITAL TRANSISTORS | |
DTA123EA | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP | |
DTA123EAA | ETC |
获取价格 |
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP | |
DTA123EAAC2 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATR, 3 | |
DTA123E-AE3-6-R | UTC |
获取价格 |
DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) | |
DTA123E-AE3-R | UTC |
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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, SOT-23, 3 PIN | |
DTA123E-AL3-6-R | UTC |
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DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) | |
DTA123E-AN3-6-R | UTC |
获取价格 |
DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) | |
DTA123E-AN3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, SOT-523, 3 PIN |