5秒后页面跳转
DTA123E PDF预览

DTA123E

更新时间: 2024-11-14 22:50:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
8页 169K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

DTA123E 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CASE 29-11, TO-226, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.31
其他特性:BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):8JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTA123E 数据手册

 浏览型号DTA123E的Datasheet PDF文件第2页浏览型号DTA123E的Datasheet PDF文件第3页浏览型号DTA123E的Datasheet PDF文件第4页浏览型号DTA123E的Datasheet PDF文件第5页浏览型号DTA123E的Datasheet PDF文件第6页浏览型号DTA123E的Datasheet PDF文件第7页 
Preferred Devices  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the TO–92  
package which is designed for through hole applications.  
http://onsemi.com  
PNP SILICON  
BIAS RESISTOR  
TRANSISTOR  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
2
V
CBO  
BASE  
V
CEO  
50  
Vdc  
1
I
C
100  
mAdc  
EMITTER  
Total Power Dissipation  
P
D
(1.)  
@ T = 25°C  
350  
mW  
A
Derate above 25°C  
2.81  
mW/°C  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance, Junction to  
Ambient (surface mounted)  
R
357  
°C/W  
θ
JA  
1
Operating and Storage  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
2
3
Maximum Temperature for  
Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
CASE 29  
TO–92 (TO–226)  
STYLE 1  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
5000/Box  
DTA114E  
DTA124E  
DTA144E  
DTA114Y  
DTA114T  
DTA143T  
DTB113E  
DTA123E  
DTA143E  
DTA143Z  
DTA114E  
DTA124E  
DTA144E  
DTA114Y  
DTA114T  
DTA143T  
DTB113E  
DTA123E  
DTA143E  
DTA143Z  
10  
22  
47  
10  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
10  
22  
47  
47  
Preferred devices are recommended choices for future use  
and best overall value.  
1.0  
2.2  
4.7  
47  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the  
minimum recommended footprint.  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
May, 2000 – Rev. 0  
DTA114E/D  

DTA123E 替代型号

型号 品牌 替代类型 描述 数据表
DTA123EET1G ONSEMI

类似代替

Bias Resistor Transistors

与DTA123E相关器件

型号 品牌 获取价格 描述 数据表
DTA123E_11 UTC

获取价格

DIGITAL TRANSISTORS
DTA123E_15 UTC

获取价格

DIGITAL TRANSISTORS
DTA123EA ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
DTA123EAA ETC

获取价格

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP
DTA123EAAC2 ROHM

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATR, 3
DTA123E-AE3-6-R UTC

获取价格

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
DTA123E-AE3-R UTC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, SOT-23, 3 PIN
DTA123E-AL3-6-R UTC

获取价格

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
DTA123E-AN3-6-R UTC

获取价格

DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS)
DTA123E-AN3-R UTC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, SOT-523, 3 PIN