生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.95 |
风险等级: | 5.58 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.1 A | 配置: | SINGLE WITH BUILT-IN RESISTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 250 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTA123E-AL3-6-R | UTC |
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DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) | |
DTA123E-AN3-6-R | UTC |
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DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) | |
DTA123E-AN3-R | UTC |
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Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, SOT-523, 3 PIN | |
DTA123EC | ETC |
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TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 | |
DTA123ECA | ROHM |
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DTA123ECA是电阻内置型晶体管。由于内置了偏压用电阻,因此输入侧无需外接电阻即可构成 | |
DTA123ECA | MCC |
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Tape: 3K/Reel, 120K/Ctn; | |
DTA123ECA | BL Galaxy Electrical |
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50V,100mA,PNP Bipolar Digital Transistor | |
DTA123ECA | YANGJIE |
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SOT-23 | |
DTA123ECAHZG | ROHM |
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DTA123ECAHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 | |
DTA123ECAT216 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |