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DSTEMP-E/SN

更新时间: 2024-01-09 14:10:06
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
28页 624K
描述
2K 5.0V I2C Serial EEPROM

DSTEMP-E/SN 数据手册

 浏览型号DSTEMP-E/SN的Datasheet PDF文件第2页浏览型号DSTEMP-E/SN的Datasheet PDF文件第3页浏览型号DSTEMP-E/SN的Datasheet PDF文件第4页浏览型号DSTEMP-E/SN的Datasheet PDF文件第5页浏览型号DSTEMP-E/SN的Datasheet PDF文件第6页浏览型号DSTEMP-E/SN的Datasheet PDF文件第7页 
24C02C  
2K 5.0V I2CSerial EEPROM  
Features:  
Package Types  
SOIC, TSSOP  
PDIP, MSOP  
• Single-supply with operation from 4.5V to 5.5V  
• Low-power CMOS technology:  
A0  
1
8
VCC  
1
2
3
4
8
7
6
5
A0  
A1  
A2  
VCC  
WP  
- Read current 1 mA, typical  
A1  
A2  
2
3
4
7
6
5
WP  
- Standby current 10 μA, typical  
• 2-wire serial interface, I2C compatible  
• Cascadable up to eight devices  
SCL  
SCL  
SDA  
VSS  
SDA VSS  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz and 400 kHz clock compatibility  
• Fast Page or Byte write time 1 ms, typical  
• Self-timed erase/write cycle  
DFN/TDFN  
1
A0  
A1  
VCC  
WP  
8
7
6
5
2
3
4
SCL  
SDA  
A2  
VSS  
• 16-byte page write buffer  
• Hardware write-protect for upper half of the array  
(80h-FFh)  
Block Diagram  
• ESD protection >4,000V  
• More than 1 million erase/write cycles  
• Data retention >200 years  
WP  
A0 A1 A2  
HV Generator  
• Factory programming available  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
• Packages include 8-lead PDIP, SOIC, TSSOP,  
DFN, TDFN and MSOP  
EEPROM  
Array  
XDEC  
• Pb-free and RoHS compliant  
Temperature ranges:  
SDA  
SCL  
Vcc  
Vss  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
Write-Protect  
Circuitry  
YDEC  
Description:  
Sense Amp.  
R/W Control  
The Microchip Technology Inc. 24C02C is a 2K bit  
Serial Electrically Erasable PROM with a voltage range  
of 4.5V to 5.5V. The device is organized as a single  
block of 256 x 8-bit memory with a 2-wire serial  
interface. Low-current design permits operation with  
typical standby and active currents of only 10 μA and 1  
mA, respectively. The device has a page write capabil-  
ity for up to 16 bytes of data and has fast write cycle  
times of only 1 ms for both byte and page writes.  
Functional address lines allow the connection of up to  
eight 24C02C devices on the same bus for up to 16K  
bits of contiguous EEPROM memory. The device is  
available in the standard 8-pin PDIP, 8-pin SOIC (3.90  
mm), 8-pin 2x3 DFN and TDFN, 8-pin MSOP and  
TSSOP packages.  
© 2008 Microchip Technology Inc.  
DS21202H-page 1  

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