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DSSK18-0025BS-TUB PDF预览

DSSK18-0025BS-TUB

更新时间: 2024-11-05 14:41:51
品牌 Logo 应用领域
力特 - LITTELFUSE 软恢复二极管光电二极管
页数 文件大小 规格书
4页 108K
描述
Rectifier Diode,

DSSK18-0025BS-TUB 技术参数

生命周期:Active包装说明:R-PSSO-G2
Reach Compliance Code:unknown风险等级:5.73
Is Samacsys:N其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, LOW NOISE, PD-CASE
应用:SOFT RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.56 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:140 A元件数量:2
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:75 W参考标准:IEC-60747
最大重复峰值反向电压:25 V最大反向电流:10000 µA
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
Base Number Matches:1

DSSK18-0025BS-TUB 数据手册

 浏览型号DSSK18-0025BS-TUB的Datasheet PDF文件第2页浏览型号DSSK18-0025BS-TUB的Datasheet PDF文件第3页浏览型号DSSK18-0025BS-TUB的Datasheet PDF文件第4页 
DSSK18-0025BS  
preliminary  
=
VRRM  
IFAV  
VF  
25V  
10A  
Schottky Diode  
= 2x  
=
0.37V  
High Performance Schottky Diode  
Low Loss and Soft Recovery  
Common Cathode  
Part number  
DSSK18-0025BS  
Marking on Product: DSSK18-0025BS  
Backside: cathode  
1
2
3
TO-263 (D2Pak)  
Features / Advantages:  
Applications:  
Package:  
Very low Vf  
Extremely low switching losses  
Low Irm values  
Improved thermal behaviour  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
Industry standard outline  
RoHS compliant  
Epoxy meets UL 94V-0  
Low noise switching  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20190222a  
© 2019 IXYS all rights reserved  

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