Datasheet > DSG9500-000

DSG9500-000

更新时间： 2024-10-30 03:30:39

品牌	Logo	应用领域
思佳讯 - SKYWORKS		二极管
页数	文件大小	规格书
5页	79K
描述
Planar Beam Lead PIN Diode

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DSG9500-000 数据手册

DATA SHEET

DSG9500-000: Planar Beam Lead PIN Diode

Applications

●

Designed for switching applications

Features

●

Low capacitance

●

Low resistance

●

Fast switching

●

Oxide-nitride passivated

●

Durable construction

●

High voltage

Absolute Maximum Ratings

Description

Characteristic

Value

The DSG9500-000 is designed for low resistance, low capaci-

tance and fast switching time. The oxide-nitride passivation

layers provide reliable operation and stable junction parameters

that provide complete sealing of the junction permitting use in

assemblies with some degree of moisture sealing.

Operating temperature

-65 °C to +150 °C

-65 °C to +200 °C

250 mW

Storage temperature

Power dissipation (derate

linearly to zero @ 175 °C)

Typical lead strength

8 grams pull

The DSG9500-000 is ideal for microstrip or stripline circuits and

for circuits requiring high isolation from a series mounted diode

such as broad band multi-throw switches, phase shifters, lim-

iters, attenuators and modulators.

Performance is guaranteed only under the conditions listed in the specifications table and is

not guaranteed under the full range(s) described by the Absolute Maximum specifications.

Exceeding any of the absolute maximum/minimum specifications may result in permanent

damage to the device and will void the warranty.

CAUTION: Although this device is designed to be as robust as

possible, Electrostatic Discharge (ESD) can damage

this device. This device must be protected at all times

from ESD. Static charges may easily produce poten-

tials of several kilovolts on the human body or

equipment, which can discharge without detection.

Industry-standard ESD precautions must be employed

at all times.

Low Capacitance Planar Beam Lead Diode

Breakdown

Voltage

@ 10 µA

(V)

Capacitance

Total @ 50 V,

1 MHz

Series Resistance

(From Ins. Loss

@ 3 GHz, 50 mA)

Minority Carrier

Lifetime

RF Switching

Outline

Drawing

Number

(1)

Part

Number

I = 10 mA,

Time

(2)

(pF)

(Ω)

= 6 mA (ns)

(ns)

Min.

Max.

Typ.

DSG9500–000

200

0.02

4.0

250

169-001

1. Total capacitance calculated from isolation at 9 GHz zero bias. Series resistance and capacitance are measured at microwave frequencies on a sample basis from each lot.

All diodes are characterized for capacitance at –50 V, 1 MHz, and series resistance at 1 KHz, 50 mA, measurements which correlate well with microwave measurements.

2. T_Smeasured from RF transition, 90% to 10%, in series configuration.

Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com

200137 Rev. A • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • February 7, 2005

12 3 4 5

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