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DSEC16-12AS-TRL PDF预览

DSEC16-12AS-TRL

更新时间: 2024-11-25 13:07:27
品牌 Logo 应用领域
IXYS 二极管
页数 文件大小 规格书
2页 41K
描述
Rectifier Diode,

DSEC16-12AS-TRL 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.73二极管类型:RECTIFIER DIODE
Base Number Matches:1

DSEC16-12AS-TRL 数据手册

 浏览型号DSEC16-12AS-TRL的Datasheet PDF文件第2页 
DSEC 16-12A  
HiPerFREDTM Epitaxial Diode  
with common cathode and soft recovery  
IFAV = 2x 10 A  
VRRM = 1200 V  
trr = 40 ns  
TO-220 AB  
VRSM  
V
VRRM  
V
Type  
1200  
1200  
DSEC 16-12A  
A
C
A
A
C
(TAB)  
A
A = Anode, C = Cathode, TAB = Cathode  
Symbol  
Test Conditions  
Maximum Ratings  
IFRMS  
IFAVM  
IFRM  
14  
10  
tbd  
A
A
A
TC = 115°C; rectangular, d = 0.5  
tP < 10 µs; rep. rating, pulse width limited by TVJM  
Features  
IFSM  
EAS  
TVJ = 45°C; tp = 10 ms (50 Hz), sine  
40  
A
International standard package  
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
TVJ = 25°C; non-repetitive  
IAS = 8 A; L = 180 µH  
6.9  
mJ  
IAR  
VA = 1.25·VR typ.; f = 10 kHz; repetitive  
0.8  
A
TVJ  
TVJM  
Tstg  
-55...+175  
175  
-55...+150  
°C  
°C  
°C  
Epoxy meets UL 94V-0  
Ptot  
Md  
TC = 25°C  
60  
W
mounting torque  
0.45...0.55  
4...5  
Nm  
lb.in.  
Applications  
Antiparallel diode for high frequency  
Weight  
Symbol  
typical  
2
g
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode in converters  
Test Conditions  
Characteristic Values  
and motor control circuits  
Rectifiers in switch mode power  
typ.  
max.  
IR  
TVJ = 25°C VR = VRRM  
TVJ = 150°C VR = VRRM  
60  
0.25  
µA  
mA  
supplies (SMPS)  
Inductive heating  
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
VF  
IF = 10 A;  
TVJ = 150°C  
TVJ = 25°C  
1.96  
2.94  
V
V
RthJC  
RthCH  
2.5  
8.5  
K/W  
K/W  
0.5  
40  
Advantages  
trr  
IF = 1 A; -di/dt = 50 A/µs;  
VR = 30 V; TVJ = 25°C  
ns  
Avalanche voltage rated for reliable  
operation  
Soft reverse recovery for low  
IRM  
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs  
TVJ = 100°C  
A
EMI/RFI  
Low IRM reduces:  
- Power dissipation within the diode  
- Turn-on loss in the commutating  
switch  
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %  
Pulse Width = 300 µs, Duty Cycle < 2.0 %  
Dimensions see IXYS Catalog 2000 (CD)  
Data according to IEC 60747 and per diode unless otherwise specified  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 1999 IXYS All rights reserved  
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