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DSB60C60PB PDF预览

DSB60C60PB

更新时间: 2024-11-13 12:55:27
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IXYS 肖特基二极管
页数 文件大小 规格书
2页 113K
描述
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

DSB60C60PB 数据手册

 浏览型号DSB60C60PB的Datasheet PDF文件第2页 
DSB 60 C 60PB  
advanced  
VRRM  
=
60 V  
30 A  
Schottky  
IFAV = 2x  
High Performance Schottky Diode  
Low Loss and Soft Recovery  
Common Cathode  
VF = 0.69 V  
1
2
3
Part number  
DSB 60 C 60PB  
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Very low Vf  
Extremely low switching losses  
Low Irm-values  
Improved thermal behaviour  
High reliability circuit operation  
Low voltage peaks for reduced  
protection circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Free wheeling diode in low voltage  
converters  
TO-220AB  
Industry standard outline  
Epoxy meets UL 94V-0  
RoHS compliant  
Low noise switching  
Low losses  
R a t i n g s  
Unit  
Symbol  
VRRM  
Definition  
Conditions  
min.  
typ.  
max.  
max. repetitive reverse voltage  
=
=
25 °C  
25 °C  
60  
V
TVJ  
reverse current  
forward voltage  
IR  
VR = 60 V  
VR = 60 V  
20  
50  
TVJ  
TVJ  
mA  
mA  
= 100 °C  
IF  
IF  
=
=
30 A  
60 A  
0.78  
1.21  
VF  
V
V
TVJ  
TVJ  
=
=
25°C  
IF  
IF  
=
=
30 A  
60 A  
0.69  
0.95  
V
V
125  
°C  
average forward current  
threshold voltage  
IFAV  
rectangular, d = 0.5  
TC = 125 °C  
TVJ = 150 °C  
30  
A
V
V
0.46  
6.9  
F0  
for power loss calculation only  
slope resistance  
r F  
m
Ω
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
RthJC  
TVJ  
0.85  
150  
145  
320  
K/W  
°C  
-55  
Ptot  
=
25 °C  
W
TC  
max. forward surge current  
junction capacitance  
IFSM  
CJ  
tp = 10 ms (50 Hz), sine  
VR = tbdV; f = 1 MHz  
TVJ  
TVJ  
TVJ  
=
=
=
45 °C  
25°C  
25 °C  
A
pF  
mJ  
A
tbd  
non-repetitive avalanche energy  
repetitive avalanche current  
EAS  
IAR  
I
AS = tbdA; L = 100 µH  
tbd  
tbd  
V = 1.5·V typ.;  
f = 10 kHz  
A
R
IXYS reserves the right to change limits, conditions and dimensi  
Data according to IEC 60747and per diode unless otherwise specified  
© 2006 IXYS all rights reserved  

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