Datasheet > DSB60C60PB

DSB60C60PB

更新时间： 2024-11-13 12:55:27

品牌	Logo	应用领域
IXYS		肖特基二极管
页数	文件大小	规格书
2页	113K
描述
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode

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中文翻译

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数据手册

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DSB60C60PB 数据手册

DSB 60 C 60PB

advanced

V_RRM

60 V

30 A

Schottky

I_FAV= 2x

High Performance Schottky Diode

Low Loss and Soft Recovery

Common Cathode

V_F= 0.69 V

Part number

DSB 60 C 60PB

Backside: cathode

Features / Advantages:

Applications:

Package:

● Very low Vf

● Extremely low switching losses

● Low Irm-values

● Improved thermal behaviour

● High reliability circuit operation

● Low voltage peaks for reduced

protection circuits

● Rectifiers in switch mode power

supplies (SMPS)

● Free wheeling diode in low voltage

converters

TO-220AB

● Industry standard outline

● Epoxy meets UL 94V-0

● RoHS compliant

● Low noise switching

● Low losses

R a t i n g s

Unit

Symbol

V_RRM

Definition

Conditions

min.

typ.

max.

max. repetitive reverse voltage

25 °C

T_VJ

reverse current

forward voltage

I_R

V_R= 60 V

T_VJ

= 100 °C

I_F

30 A

60 A

0.78

1.21

V_F

T_VJ

25°C

I_F

30 A

60 A

0.69

0.95

125

°C

average forward current

threshold voltage

I_FAV

rectangular, d = 0.5

T_C= 125 °C

T_VJ= 150 °C

0.46

6.9

for power loss calculation only

slope resistance

r _F

thermal resistance junction to case

virtual junction temperature

total power dissipation

R_thJC

T_VJ

0.85

150

145

320

K/W

°C

-55

P_tot

25 °C

T_C

max. forward surge current

junction capacitance

I_FSM

C_J

t_p= 10 ms (50 Hz), sine

V_R= tbdV; f = 1 MHz

T_VJ

45 °C

25°C

25 °C

tbd

non-repetitive avalanche energy

repetitive avalanche current

E_AS

I_AR

_AS= tbdA; L = 100 µH

tbd

V = 1.5·V typ.;

f = 10 kHz

IXYS reserves the right to change limits, conditions and dimensi

Data according to IEC 60747and per diode unless otherwise specified

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