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DS9502P PDF预览

DS9502P

更新时间： 2024-11-13 20:34:39
品牌 Logo 应用领域
美信 - MAXIM 局域网光电二极管
页数 文件大小 规格书
3页 70K
描述
Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, 3.70 X 4 MM, 1.50 MM HEIGHT, TSOC-6

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中文翻译

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DS9502P 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：3.70 X 4 MM, 1.50 MM HEIGHT, TSOC-6针数：6
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
Is Samacsys：N其他特性：LOW CAPACITANCE
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：R-PDSO-C6
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：6
最高工作温度：85 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性：UNIDIRECTIONAL
最大功率耗散：1 W认证状态：Not Qualified
子类别：Voltage Reference Diodes表面贴装：YES
技术：AVALANCHE端子面层：Tin/Lead (Sn/Pb)
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：20Base Number Matches：1

DS9502P 数据手册

 浏览型号DS9502P的Datasheet PDF文件第2页浏览型号DS9502P的Datasheet PDF文件第3页 
DS9502  
ESD Protection Diode  
www.dalsemi.com  
SPECIAL FEATURES  
§ Zener characteristic with voltage snap–back  
to protect against ESD hits  
SYMBOL AND CONVENTIONS  
C
IC  
§ High avalanche voltage, low leakage and low  
VCA  
capacitance avoid signal attenuation  
A
§ Compatible to all 5V logic families  
PACKAGE OUTLINE  
§ Space saving, low inductance TSOC surface  
mount package  
TSOC SURFACE MOUNT PACKAGE  
§ Symmetric dual–port bondout to maximize  
1
2
3
6
5
4
energy dissipation in protection device  
SIDE VIEW  
§ Industrial temperature range  
TOP VIEW  
3.7 X 4.0 X 1.5 mm  
See Mech. Drawings  
Section  
ORDERING INFORMATION  
DS9502P  
6-lead TSOC package  
DESCRIPTION  
This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable  
memory modules. The memory chips used for these modules have already a strong ESD–protection  
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than  
27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the  
DS9502 will eventually fail “short” thus preventing further damage.  
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds  
the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher  
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage  
is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the  
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a  
small leakage current.  
1 of 3  
102199  
123

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 		Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, 3.70 X 4 MM, 1.50 MM H
DS9502P+T&R MAXIM

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 		Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, 3.70 X 4 MM, 1.50 MM H
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 		ESD Protection Diode with Resistors
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DS9503P DALLAS

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DS9503P/T&R MAXIM

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 		Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, 3.70 X 4 MM, 1.50 MM H
DS9503P+ MAXIM

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 		ESD Protection Diode with Resistors
DS9503P+T&R MAXIM

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 		Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, TSOC-6
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 		ESD Protection Diode with Resistors

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