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DS75325N PDF预览

DS75325N

更新时间: 2024-11-23 22:49:07
品牌 Logo 应用领域
美国国家半导体 - NSC 外围驱动器驱动程序和接口存储接口集成电路光电二极管
页数 文件大小 规格书
14页 203K
描述
Memory Drivers

DS75325N 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:DIP,Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.85Is Samacsys:N
接口集成电路类型:NAND GATE BASED PERIPHERAL DRIVERJESD-30 代码:R-PDIP-T14
JESD-609代码:e0功能数量:2
端子数量:14最高工作温度:70 °C
最低工作温度:输出电流流向:SOURCE AND SINK
标称输出峰值电流:0.6 A封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified标称供电电压:5 V
电源电压1-Nom:24 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:0.05 µs接通时间:0.05 µs
Base Number Matches:1

DS75325N 数据手册

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June 1992  
DS75325  
Memory Drivers  
General Description  
The DS75325 is a monolithic memory driver which features  
high current outputs as well as internal decoding of logic  
inputs. This circuit is designed for use with magnetic memo-  
ries.  
to operate at higher source currents for a given junction  
temperature. If this method of source current setting is not  
desired, then Nodes R and R  
can be shorted externally,  
to Node  
R. This provides adequate base drive for source currents up  
INT  
activating an internal resistor connected from V  
CC2  
The circuit contains two 600 mA sink-switch pairs and two  
600 mA source-switch pairs. Inputs A and B determine  
source selection while the source strobe (S1) allows the  
selected source turn on. In the same manner, inputs C and  
D determine sink selection while the sink strobe (S2) allows  
the selected sink turn on.  
e
e
24V.  
to 375 mA with V  
15V or 600 mA with V  
CC2  
CC2  
Features  
Y
600 mA output capability  
Y
Y
Y
Y
Y
Y
24V output capability  
Sink-output collectors feature an internal pull-up resistor in  
. This pro-  
Dual sink and dual source outputs  
Fast switching times  
parallel with a clamping diode connected to V  
CC2  
tects the outputs from voltage surges associated with  
switching inductive loads.  
Source base drive externally adjustable  
Input clamping diodes  
The source stage features Node R which allows extreme  
flexibility in source current selection by controlling the  
amount of base drive to each source transistor. This method  
of setting the base drive brings the power associated with  
the resistor outside the package thereby allowing the circuit  
TTL compatible  
Connection Diagram  
Truth Table  
Dual-In-Line Package  
Address Inputs  
Strobe Inputs  
Outputs  
Source Sink  
Source  
B
Sink Source Sink  
S2  
A
C
D
S1  
W
X
Y
Z
L
H
X
X
X
H
H
L
X
X
X
H
X
X
L
H
X
H
X
X
H
L
X
H
L
L
H
H
H
X
H
H
L
L
H
X
ON OFF OFF OFF  
OFF ON OFF OFF  
OFF OFF ON OFF  
OFF OFF OFF ON  
OFF OFF OFF OFF  
OFF OFF OFF OFF  
e
e
e
Low Level, X Irrelevant  
H
High Level, L  
Note: Not more than one output is to be on at any one time.  
TL/F/9755–2  
Top View  
Order Number DS75325N  
See NS Package Number N14A  
C
1995 National Semiconductor Corporation  
TL/F/9755  
RRD-B30M115/Printed in U. S. A.  

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