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DS2712Z+ PDF预览

DS2712Z+

更新时间: 2024-11-05 22:08:55
品牌 Logo 应用领域
美信 - MAXIM 电源电路电池电源管理电路光电二极管PC
页数 文件大小 规格书
1页 15K
描述
Loose Cell NiMH Chargers

DS2712Z+ 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:0.150 INCH, LEAD FREE, SOP-16针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:6 weeks
风险等级:1.65Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:387486
Samacsys Pin Count:16Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:16 Narrow SO
Samacsys Released Date:2017-01-11 21:24:41Is Samacsys:N
可调阈值:NO模拟集成电路 - 其他类型:POWER SUPPLY MANAGEMENT CIRCUIT
JESD-30 代码:R-PDSO-G16JESD-609代码:e3
长度:9.9 mm湿度敏感等级:1
信道数量:1功能数量:1
端子数量:16最高工作温度:70 °C
最低工作温度:-20 °C封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP16,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260电源:5 V
认证状态:Not Qualified座面最大高度:1.75 mm
子类别:Power Management Circuits最大供电电流 (Isup):0.5 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:3.9 mmBase Number Matches:1

DS2712Z+ 数据手册

  
DSS25D-0045-T258  
MECHANICAL DATA  
Dimensions in mm  
6.86 (0.270)  
6.09 (0.240)  
17.65 (0.695)  
17.39 (0.685)  
DUAL SCHOTTKY  
1.14 (0.707)  
0.88 (0.035)  
BARRIER DIODE IN A HERMETIC  
TO258 PACKAGE  
4.19 (0.165)  
3.94 (0.155)  
Dia.  
1
2 3  
FEATURE  
• 25A, 45V  
• Dual Common Cathode Configuration  
5.08 (0.200)  
BSC  
3.56 (0.140)  
BSC  
• Low V  
F
1.65 (0.065)  
1.39 (0.055)  
Typ.  
• Low switching Losses  
TO–258 METAL PACKAGE  
Pin 1Anode 1  
Pin 2 Cathode  
Pin 3 Anode 2  
A1  
K
A2  
ABSOLUTE MAXIMUM RATINGS (per diode))  
DSS25D-0045-T258  
I
I
I
I
RMS Forward Current (T = T  
)
35A  
FRMS  
FAV  
FSM  
AR  
J
VJM  
Average Forward Current  
25A  
Maximum Surge Forward Current t = 10ms, 50H  
550A  
1.8A  
p
z
Reptetive Avalande Current V = 1.5 V  
, f = 10KH  
z
A
RRM  
o
T
T
Storage Temperature  
Junction Temperature  
Total Power Dissipation  
150 C  
STG  
J
o
– 55 to +150 C  
TBA.  
P
TOT  
ELECTRICAL CHARACTERISTICS (Per Diode)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
I = 25A  
F
T = 125°C  
0.65  
0.75  
0.80  
0.5  
J
V
I
Forward Voltage  
I = 25A  
F
T = 25°C  
V
F
J
I = 50A  
F
T = 125°C  
J
V = 45V  
R
T = 25°C  
J
Reverse Current  
mA  
R
V = 45V  
R
T = 125°C  
10  
J
THERMAL DATA  
R
Thermal Resistance Junction – Case  
TBA  
THj–case  
* Pulse Test:  
Pulse Duration = 300 s , Duty Cycle 2%  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 9/98  

DS2712Z+ 替代型号

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