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DS2711EB+T PDF预览

DS2711EB+T

更新时间: 2024-11-05 13:00:23
品牌 Logo 应用领域
美信 - MAXIM 电池
页数 文件大小 规格书
1页 15K
描述
Power Supply Management Circuit,

DS2711EB+T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:5 weeks风险等级:5.69
模拟集成电路 - 其他类型:POWER SUPPLY MANAGEMENT CIRCUIT峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DS2711EB+T 数据手册

  
DSS25D-0045-T258  
MECHANICAL DATA  
Dimensions in mm  
6.86 (0.270)  
6.09 (0.240)  
17.65 (0.695)  
17.39 (0.685)  
DUAL SCHOTTKY  
1.14 (0.707)  
0.88 (0.035)  
BARRIER DIODE IN A HERMETIC  
TO258 PACKAGE  
4.19 (0.165)  
3.94 (0.155)  
Dia.  
1
2 3  
FEATURE  
• 25A, 45V  
• Dual Common Cathode Configuration  
5.08 (0.200)  
BSC  
3.56 (0.140)  
BSC  
• Low V  
F
1.65 (0.065)  
1.39 (0.055)  
Typ.  
• Low switching Losses  
TO–258 METAL PACKAGE  
Pin 1Anode 1  
Pin 2 Cathode  
Pin 3 Anode 2  
A1  
K
A2  
ABSOLUTE MAXIMUM RATINGS (per diode))  
DSS25D-0045-T258  
I
I
I
I
RMS Forward Current (T = T  
)
35A  
FRMS  
FAV  
FSM  
AR  
J
VJM  
Average Forward Current  
25A  
Maximum Surge Forward Current t = 10ms, 50H  
550A  
1.8A  
p
z
Reptetive Avalande Current V = 1.5 V  
, f = 10KH  
z
A
RRM  
o
T
T
Storage Temperature  
Junction Temperature  
Total Power Dissipation  
150 C  
STG  
J
o
– 55 to +150 C  
TBA.  
P
TOT  
ELECTRICAL CHARACTERISTICS (Per Diode)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
I = 25A  
F
T = 125°C  
0.65  
0.75  
0.80  
0.5  
J
V
I
Forward Voltage  
I = 25A  
F
T = 25°C  
V
F
J
I = 50A  
F
T = 125°C  
J
V = 45V  
R
T = 25°C  
J
Reverse Current  
mA  
R
V = 45V  
R
T = 125°C  
10  
J
THERMAL DATA  
R
Thermal Resistance Junction – Case  
TBA  
THj–case  
* Pulse Test:  
Pulse Duration = 300 s , Duty Cycle 2%  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 9/98  

DS2711EB+T 替代型号

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