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DS22W_V01 PDF预览

DS22W_V01

更新时间: 2024-10-30 01:16:31
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
3页 409K
描述
Surface Mount Schottky Barrier Rectifier

DS22W_V01 数据手册

 浏览型号DS22W_V01的Datasheet PDF文件第2页浏览型号DS22W_V01的Datasheet PDF文件第3页 
DS22W THRU DS220W SOD123FL  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 20 to 200 V  
Forward Current – 2.0 A  
Pinning  
1.Cathode  
2.Anode  
1
FEATURES  
2
Metal silicon junction, majority carrier conduction  
For surface mounted applications  
Low power loss, high efficiency  
SOD123FL  
High forward surge current capability  
Marking Code  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
Lead free in comply with EU RoHS 2011/65/EU directives  
DS22W  
DS24W  
K22  
K24  
S22  
S24  
DS26W  
DS28W  
K26  
S26  
MECHANICAL DATA  
K28  
S28  
Case: SOD-123FL  
Terminals: Solderable per MIL-STD-750, Method 2026  
DS210W  
DS212W  
DS215W  
DS220W  
K210  
K212  
K215  
K220  
S210  
S212  
S215  
S220  
Approx. Weight: 15mg /0.00048oz  
Absolute Maximum Ratings and Electrical characteristics  
Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,  
for capacitive load, derate by 20 %  
Parameter  
Symbols DS22W  
DS24W  
DS26W  
DS28W  
DS210W DS212W DS215W DS220W Units  
Maximum Repetitive Peak Reverse Voltage  
20  
40  
60  
80  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
V
RRM  
RMS  
V
V
V
A
A
Maximum RMS voltage  
14  
20  
28  
40  
42  
60  
56  
80  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
100  
120  
V
DC  
2.0  
IF(AV)  
Peak Forward Surge Current, 8.3ms Single Half Sine-  
wave Superimposed On Rated Load (JEDEC method)  
50  
40  
IFSM  
0.95  
V
F
Maximum Instantaneous Forward Voltage at 2 A  
0.55  
220  
0.70  
0.85  
V
Maximum Instantaneous Reverse Current TA = 25°C  
0.5  
5
0.3  
3
IR  
mA  
at Rated DC Reverse Voltage  
TA = 100°C  
Typical Junction Capacitance1)  
C
j
80  
pF  
Typical Thermal Resistance 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
85  
°C/W  
R
θJA  
-55 ~ +150  
-55 ~ +150  
Tj  
°C  
°C  
T
stg  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  

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