5秒后页面跳转
DS1345YB-100-IND PDF预览

DS1345YB-100-IND

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
美信 - MAXIM 电池静态存储器监控
页数 文件大小 规格书
12页 220K
描述
1024k Nonvolatile SRAM with Battery Monitor

DS1345YB-100-IND 数据手册

 浏览型号DS1345YB-100-IND的Datasheet PDF文件第5页浏览型号DS1345YB-100-IND的Datasheet PDF文件第6页浏览型号DS1345YB-100-IND的Datasheet PDF文件第7页浏览型号DS1345YB-100-IND的Datasheet PDF文件第9页浏览型号DS1345YB-100-IND的Datasheet PDF文件第10页浏览型号DS1345YB-100-IND的Datasheet PDF文件第11页 
DS1345Y/AB  
(tA: See Note 10)  
UNITS NOTES  
POWER-DOWN/POWER-UP TIMING  
PARAMETER  
SYMBOL MIN  
tPD  
tF  
tRPD  
tR  
TYP  
MAX  
1.5  
11  
µs  
µs  
µs  
µs  
ms  
ms  
ms  
s
VCC Fail Detect to CE and WE Inactive  
VCC slew from VTP to 0V  
150  
150  
15  
14  
VCC Fail Detect to RST Active  
VCC slew from 0V to VTP  
tPU  
2
VCC Valid to CE and WE Inactive  
VCC Valid to End of Write Protection  
VCC Valid to RST Inactive  
tREC  
tRPU  
tBPU  
125  
350  
1
150  
200  
14  
14  
VCC Valid to BW Valid  
BATTERY WARNING TIMING  
PARAMETER  
(tA: See Note 10)  
SYMBOL MIN  
TYP  
MAX  
UNITS NOTES  
Battery Test Cycle  
tBTC  
tBTPW  
tBW  
24  
hr  
s
Battery Test Pulse Width  
1
1
s
Battery Test to BW Active  
(tA = 25°C)  
PARAMETER  
SYMBOL MIN  
TYP  
MAX  
UNITS NOTES  
Expected Data Retention Time  
tDR  
10  
years  
9
WARNING:  
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery  
backup mode.  
NOTES:  
1. WE is high for a Read Cycle.  
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.  
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE  
going low to the earlier of CE or WE going high.  
4. tDS is measured from the earlier of CE or WE going high.  
5. These parameters are sampled with a 5pF load and are not 100% tested.  
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output  
buffers remain in a high-impedance state during this period.  
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output  
buffers remain in high-impedance state during this period.  
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,  
the output buffers remain in a high impedance state during this period.  
8 of 12  

与DS1345YB-100-IND相关器件

型号 品牌 描述 获取价格 数据表
DS1345YB-70 MAXIM 1024k Nonvolatile SRAM with Battery Monitor

获取价格

DS1345YB-70-IND MAXIM 1024k Nonvolatile SRAM with Battery Monitor

获取价格

DS1345YC-100 MAXIM 1024k Nonvolatile SRAM with Battery Monitor

获取价格

DS1345YC-100-IND MAXIM 1024k Nonvolatile SRAM with Battery Monitor

获取价格

DS1345YC-70 MAXIM 1024k Nonvolatile SRAM with Battery Monitor

获取价格

DS1345YC-70-IND MAXIM 1024k Nonvolatile SRAM with Battery Monitor

获取价格