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DS12W PDF预览

DS12W

更新时间: 2024-11-12 01:16:31
品牌 Logo 应用领域
佑风微 - YFW /
页数 文件大小 规格书
3页 409K
描述
Surface Mount Schottky Barrier Rectifier

DS12W 数据手册

 浏览型号DS12W的Datasheet PDF文件第2页浏览型号DS12W的Datasheet PDF文件第3页 
DS12W THRU DS120W SOD123FL  
Surface Mount Schottky Barrier Rectifier  
Reverse Voltage - 20 to 200 V  
Forward Current - 1 A  
Pinning  
1.Cathode  
2.Anode  
1
FEATURES  
2
Metal silicon junction, majority carrier conduction  
For surface mounted applications  
Low power loss, high efficiency  
SOD123FL  
High forward surge current capability  
Marking Code  
For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
Lead free in comply with EU RoHS 2011/65/EU directives  
DS12W  
DS14W  
K12  
K14  
S12  
S14  
DS16W  
DS18W  
K16  
S16  
MECHANICAL DATA  
K18  
S18  
Case: SOD-123FL  
Terminals: Solderable per MIL-STD-750, Method 2026  
DS110W  
DS112W  
DS115W  
DS120W  
K110  
K112  
K115  
K120  
S110  
S112  
S115  
S120  
Approx. Weight: 15mg /0.00048oz  
Absolute Maximum Ratings and Electrical characteristics  
Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,  
for capacitive load, derate by 20 %  
Parameter  
Symbols DS12W  
DS14W  
DS16W  
DS18W  
DS110W DS112W DS115W DS120W Units  
Maximum Repetitive Peak Reverse Voltage  
20  
40  
60  
80  
100  
70  
120  
84  
150  
105  
150  
200  
140  
200  
V
RRM  
RMS  
V
V
V
A
A
Maximum RMS voltage  
14  
20  
28  
40  
42  
60  
56  
80  
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
100  
120  
V
DC  
1.0  
IF(AV)  
Peak Forward Surge Current, 8.3ms Single Half Sine-  
wave Superimposed On Rated Load (JEDEC method)  
40  
30  
IFSM  
0.90  
V
F
Maximum Instantaneous Forward Voltage at 1 A  
0.55  
110  
0.70  
0.85  
V
Maximum Instantaneous Reverse Current TA = 25°C  
0.3  
10  
0.2  
5
0.1  
2
IR  
mA  
at Rated DC Reverse Voltage  
TA = 100°C  
Typical Junction Capacitance1)  
C
j
80  
pF  
Typical Thermal Resistance 2)  
Operating Junction Temperature Range  
Storage Temperature Range  
100  
°C/W  
R
θJA  
-55 ~ +150  
-55 ~ +150  
Tj  
°C  
°C  
T
stg  
1Measured at 1 MHz and applied reverse voltage of 4 V D.C  
2P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
www.yfwdiode.com  
Dongguan YFW Electronics Co, Ltd.  
1 / 3  

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