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DRV8770RGE PDF预览

DRV8770RGE

更新时间: 2024-11-11 02:52:31
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德州仪器 - TI
页数 文件大小 规格书
27页 3001K
描述
DRV8770: 100-V Brushed DC Gate Driver

DRV8770RGE 数据手册

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DRV8770  
SLVSFL8 – JULY 2021  
DRV8770: 100-V Brushed DC Gate Driver  
1 Features  
3 Description  
100-V H-bridge gate driver  
The DRV8770 device provides two half-bridge gate  
drivers, each capable of driving high-side and low-  
side N-channel power MOSFETs. The integrated  
bootstrap diode and external capacitor generate the  
correct gate drive voltages for the high-side MOSFETs  
while the GVDD drives the gates of the low-side  
MOSFETs. The gate drive architecture supports gate  
drive currents up to 750-mA source and 1.5-A sink.  
– Drives N-channel MOSFETs (NMOS)  
– Gate driver supply (GVDD): 5-20 V  
– MOSFET supply (SHx) support up to 100 V  
Integrated bootstrap diodes  
Supports inverting and non-inverting INLx inputs  
(QFN package)  
Bootstrap gate drive architecture  
– 750-mA source current  
– 1.5-A Sink current  
The high voltage tolerance of the gate drive pins  
improves system robustness. The SHx phase pins  
can tolerate significant negative voltage transients,  
while the high-side gate driver supply can support  
higher positive voltage transients (115-V absolute  
maximum) on the BSTx and GHx pins. Small  
propagation delay and delay matching specifications  
minimize the dead-time requirement which further  
improves efficiency. Undervoltage protection is  
provided for both low and high side through GVDD  
and BST undervoltage lockout.  
Supports up to 15s battery powered applications  
Low leakage current on SHx pins (<55 µA)  
Absolute maximum BSTx voltage upto 115-V  
Supports negative transients down to -22 V on  
SHx pins  
Adjustable deadtime through DT pin in QFN  
package  
Fixed Deadtime insertion of 200 ns in TSSOP  
package  
Supports 3.3-V, and 5-V logic inputs with 20-V abs  
max  
4-ns typical propogation delay matching  
Compact QFN and TSSOP packages and  
footprints  
Device Information(1)  
PART NUMBER  
DRV8770PW  
PACKAGE  
TSSOP (20)  
VQFN (24)  
BODY SIZE (NOM)  
6.40 mm × 4.40 mm  
4.00 mm × 4.00 mm  
DRV8770RGE  
Efficient system design with Power Blocks  
Integrated protection features  
– BST undervoltage lockout (BSTUV)  
– GVDD undervoltage (GVDDUV)  
(1) For all available packages, see the orderable addendum at  
the end of the data sheet.  
PVDD  
GVDD  
DBx  
BSTA, BSTB  
2 Applications  
GVDD  
INHA  
INHB  
GHA, GHB  
SHA, SHB  
E-Bikes, E-Scooters, and E-Mobility  
Cordless Garden and Power Tools, Lawnmowers  
Cordless Vacuum Cleaners  
Drones, Robotics, and RC Toys  
Industrial and Logistics Robots  
Power Tools  
MCU  
DRV8770  
INLA  
INLB  
GLA, GLB  
GND  
Repeated for 2  
half-bridges  
Simplified Schematic for DRV8770  
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 

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