Datasheet > DRV8770RGE

DRV8770RGE

更新时间： 2024-09-20 02:52:31

品牌	Logo	应用领域
德州仪器 - TI		栅
页数	文件大小	规格书
27页	3001K
描述
DRV8770: 100-V Brushed DC Gate Driver

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DRV8770RGE 数据手册

DRV8770

SLVSFL8 – JULY 2021

DRV8770: 100-V Brushed DC Gate Driver

1 Features

3 Description

•

100-V H-bridge gate driver

The DRV8770 device provides two half-bridge gate

drivers, each capable of driving high-side and low-

side N-channel power MOSFETs. The integrated

bootstrap diode and external capacitor generate the

correct gate drive voltages for the high-side MOSFETs

while the GVDD drives the gates of the low-side

MOSFETs. The gate drive architecture supports gate

drive currents up to 750-mA source and 1.5-A sink.

– Drives N-channel MOSFETs (NMOS)

– Gate driver supply (GVDD): 5-20 V

– MOSFET supply (SHx) support up to 100 V

Integrated bootstrap diodes

Supports inverting and non-inverting INLx inputs

(QFN package)

•

Bootstrap gate drive architecture

– 750-mA source current

– 1.5-A Sink current

The high voltage tolerance of the gate drive pins

improves system robustness. The SHx phase pins

can tolerate significant negative voltage transients,

while the high-side gate driver supply can support

higher positive voltage transients (115-V absolute

maximum) on the BSTx and GHx pins. Small

propagation delay and delay matching specifications

minimize the dead-time requirement which further

improves efficiency. Undervoltage protection is

provided for both low and high side through GVDD

and BST undervoltage lockout.

•

Supports up to 15s battery powered applications

Low leakage current on SHx pins (<55 µA)

Absolute maximum BSTx voltage upto 115-V

Supports negative transients down to -22 V on

SHx pins

Adjustable deadtime through DT pin in QFN

package

Fixed Deadtime insertion of 200 ns in TSSOP

package

Supports 3.3-V, and 5-V logic inputs with 20-V abs

max

4-ns typical propogation delay matching

Compact QFN and TSSOP packages and

footprints

•

Device Information⁽¹⁾

PART NUMBER

DRV8770PW

PACKAGE

TSSOP (20)

VQFN (24)

BODY SIZE (NOM)

6.40 mm × 4.40 mm

4.00 mm × 4.00 mm

•

DRV8770RGE

•

Efficient system design with Power Blocks

Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

PVDD

GVDD

DBx

BSTA, BSTB

2 Applications

GVDD

INHA

INHB

GHA, GHB

SHA, SHB

•

E-Bikes, E-Scooters, and E-Mobility

Cordless Garden and Power Tools, Lawnmowers

Cordless Vacuum Cleaners

Drones, Robotics, and RC Toys

Industrial and Logistics Robots

Power Tools

MCU

DRV8770

INLA

INLB

GLA, GLB

GND

Repeated for 2

half-bridges

Simplified Schematic for DRV8770

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

12 3 4 5 6 7...27

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与DRV8770RGE相关器件

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DRV8770RGER	TI	获取价格	DRV8770: 100-V Brushed DC Gate Driver
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DRV8800A0RTY	TI	获取价格	DMOS FULL-BRIDGE MOTOR DRIVERS
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DRV8800PWPR	TI	获取价格	DMOS FULL-BRIDGE MOTOR DRIVERS
DRV8800QPWPRQ1	TI	获取价格	DMOS FULL-BRIDGE MOTOR DRIVERS
DRV8800QRTYRQ1	TI	获取价格	DMOS FULL-BRIDGE MOTOR DRIVERS
DRV8800RTYR	TI	获取价格	DMOS FULL-BRIDGE MOTOR DRIVERS

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