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DRA2143X0L PDF预览

DRA2143X0L

更新时间: 2024-11-10 01:24:31
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
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描述
Silicon PNP epitaxial planar type

DRA2143X0L 数据手册

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Doc No. TT4-EA-11728  
Revision. 3  
Transistors with Built-in Resistor  
DRA2143X0L  
DRA2143X0L  
Silicon PNP epitaxial planar type  
Unit: mm  
For digital circuit  
2.9  
Complementary to DRC2143X  
0.4  
0.16  
3
Features  
Low collector-emitter saturation voltage Vce(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)  
1
2
1.1  
Marking Symbol:  
Packaging  
L6  
(0.95)(0.95)  
1.9  
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  
1. Base  
2. Emitter  
3. Collector  
Panasonic  
JEITA  
Mini3-G3-B  
SC-59A  
TO-236AA/SOT-23  
Absolute Maximum Ratings Ta = 25 C  
Code  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector current  
Symbol  
VCBO  
VCEO  
IC  
Rating  
-50  
-50  
-100  
200  
Unit  
V
V
mA  
mW  
°C  
Internal Connection  
Total power dissipation  
Junction temperature  
PT  
Tj  
C
R1  
B
150  
R2  
Operating ambient temperature  
Storage temperature  
Topr  
Tstg  
-40 to +85  
-55 to +150  
°C  
°C  
E
k  
k  
Resistance R1  
R2  
4.7  
10  
value  
Electrical Characteristics Ta = 25 C 3 C  
Parameter  
Symbol  
VCBO IC = -10 μA, IE = 0  
VCEO IC = -2 mA, IB = 0  
Conditions  
Min Typ Max  
-50  
-50  
Unit  
V
V
μA  
μA  
mA  
-
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Collector-base cutoff current (Emitter open)  
Collector-emitter cutoff current (Base open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
ICEO  
IEBO  
hFE  
VCB = -50 V, IE = 0  
VCE = -50 V, IB = 0  
VEB = -6 V, IC = 0  
-0.1  
-0.5  
-1.0  
VCE = -10 V, IC = -5 mA  
30  
Collector-emitter saturation voltage  
VCE(sat) IC = -10 mA, IB = -0.5 mA  
Vi(on) VCE = -0.2 V, IC = -5 mA  
Vi(off) VCE = -5 V, IC = -100 μA  
-0.25  
-1.7  
V
V
V
Input voltage  
-0.6  
k  
-
Input resistance  
Resistance ratio  
R1  
R1/R2  
-30% 4.7 +30%  
0.37 0.47 0.57  
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.  
Note)1.  
Page 1 of 3  
Established : 2009-10-29  
Revised : 2014-01-23  

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