Datasheet > DR200G

DR200G

更新时间： 2024-11-08 22:29:51

品牌	Logo	应用领域
EIC		/
页数	文件大小	规格书
2页	41K
描述
GLASS PASSIVATED JUNCTION SILICON RECTIFIERS

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DR200G 数据手册

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

DR200G - DR210G

PRV : 50 - 1000 Volts

Io : 2.0 Amperes

FEATURES :

* Glass passivated chip

* High current capability

* High reliability

1.00 (25.4)

0.161 (4.10)

MIN.

0.154 (3.90)

* Low reverse current

* Low forward voltage drop

0.284 (7.20)

0.268 (6.84)

MECHANICAL DATA :

* Case : D2 Molded plastic

1.00 (25.4)

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.034 (0.86)

MIN.

0.028 (0.71)

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.465 gram

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

SYMBOL

UNIT

800 1000 Volts

560 700 Volts

200G 201G 202G 204G 206G 208G 210G

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Current

100

800 1000 Volts

0.375"(9.5mm) Lead Length Ta = 50 C

I_F(AV)

2.0

Amps.

Peak Forward Surge Current

8.3ms Single half sine wave Superimposed

on rated load (JEDEC Method)

I_FSM

V_F

1.0

5.0

Amps.

Volts

Maximum Forward Voltage at I_F= 2.0 Amps.

Maximum DC Reverse Current

at rated DC Blocking Voltage

Ta = 25 C

I_R

Ta = 100 C

I_R(H)

C_J

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Junction Temperature Range

R JA

C/W

- 65 to + 175

Storage Temperature Range

T_STG

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V_DC

(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

UPDATE : MAY 27, 1998

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