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DR200 PDF预览

DR200

更新时间: 2024-12-01 03:30:27
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 44K
描述
SILICON RECTIFIER DIODES

DR200 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
风险等级:5.74配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
最大非重复峰值正向电流:75 A元件数量:1
最大输出电流:2 A最大重复峰值反向电压:50 V
子类别:Rectifier Diodes表面贴装:NO
Base Number Matches:1

DR200 数据手册

 浏览型号DR200的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
DR200 - DR210  
PRV : 50 - 1000 Volts  
Io : 2.0 Amperes  
D2  
FEATURES :  
1.00 (25.4)  
* High current capability  
* High surge current capability  
* High reliability  
0.161 (4.10)  
MIN.  
0.154 (3.90)  
* Low reverse current  
* Low forward voltage drop  
* Pb / RoHS Free  
0.284 (7.20)  
0.268 (6.84)  
1.00 (25.4)  
0.034 (0.86)  
0.028 (0.71)  
MIN.  
MECHANICAL DATA :  
* Case : D2 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
Dimensions in inches and ( millimeters )  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
* Weight : 0.465 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherwise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
DR200 DR201 DR202 DR204 DR206 DR208 DR210  
RATING  
SYMBOL  
UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800 1000  
560 700  
800 1000  
V
V
V
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Current  
0.375"(9.5mm) Lead Length Ta = 50 °C  
Peak Forward Surge Current  
IF  
2.0  
A
IFSM  
75  
A
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
Maximum Forward Voltage at IF = 2.0 Amps.  
VF  
IR  
1.0  
5.0  
50  
V
mA  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
Storage Temperature Range  
Ta = 25 °C  
IR(H)  
CJ  
Ta = 100 °C  
mA  
75  
pF  
20  
°C/W  
°C  
RqJA  
TJ  
- 65 to + 175  
- 65 to + 175  
TSTG  
°C  
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
Page 1 of 2  
Rev. 02 : March 25, 2005  

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