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DPF60IM400HB PDF预览

DPF60IM400HB

更新时间: 2024-11-24 12:52:19
品牌 Logo 应用领域
IXYS 二极管快恢复二极管软恢复二极管
页数 文件大小 规格书
4页 272K
描述
High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

DPF60IM400HB 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:ROHS COMPLIANT, PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:8.51
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.23 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:600 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:60 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向恢复时间:0.06 µs子类别:Rectifier Diodes
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

DPF60IM400HB 数据手册

 浏览型号DPF60IM400HB的Datasheet PDF文件第2页浏览型号DPF60IM400HB的Datasheet PDF文件第3页浏览型号DPF60IM400HB的Datasheet PDF文件第4页 
DPF 60 IM 400 HB  
final  
VRRM  
IFAV  
trr  
=
=
=
400 V  
HiPerFRED²  
A
60  
High Performance Fast Recovery Diode  
Low Loss and Soft Recovery  
Single Diode  
60 ns  
Part number  
1
2
DPF 60 IM 400 HB  
3
Backside: cathode  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Very low leakage current  
Very short recovery time  
Improved thermal behaviour  
Very low Irm-values  
Antiparallel diode for high frequency  
switching devices  
Antisaturation diode  
Snubber diode  
Free wheeling diode  
Housing: TO-247  
rIndustry standard outline  
rEpoxy meets UL 94V-0  
rRoHS compliant  
Very soft recovery behaviour  
Avalanche voltage rated for reliable operation  
Soft reverse recovery for low EMI/RFI  
Low Irm reduces:  
Rectifiers in switch mode power  
supplies (SMPS)  
Uninterruptible power supplies (UPS)  
- Power dissipation within the diode  
- Turn-on loss in the commutating switch  
R a t i n g s  
Conditions  
Symbol  
VRRM  
IR  
Definition  
min. typ. max. Unit  
TVJ  
400  
V
max. repetitive reverse voltage  
reverse current  
=
=
25°C  
25°C  
µA  
VR = 400V  
VR = 400V  
TVJ  
1
TVJ = 150°C  
TVJ 25°C  
0.5 mA  
forward voltage  
VF  
IF  
IF  
IF  
IF  
=
=
=
=
60A  
120A  
60A  
=
1.27  
V
V
V
V
A
V
1.53  
1.09  
1.39  
60  
T
VJ = 150°C  
120A  
IFAV  
VF0  
rF  
TC = 130°C  
TVJ = 175°C  
average forward current  
threshold voltage  
rectangular  
d = 0.5  
0.76  
for power loss calculation only  
slope resistance  
4.9 m  
RthJC  
TVJ  
Ptot  
IFSM  
IRM  
0.55 K/W  
thermal resistance junction to case  
virtual junction temperature  
total power dissipation  
-55  
175  
275  
600  
°C  
W
A
TC  
=
=
=
25°C  
45°C  
25°C  
max. forward surge current  
max. reverse recovery current  
TVJ  
TVJ  
t = 10 ms (50 Hz), sine  
6
12  
A
A
IF = 60A; VR = 270V  
-diF/dt = 200 A/µs  
TVJ = 125°C  
TVJ 25°C  
TVJ = 125°C  
TVJ 25°C  
reverse recovery time  
junction capacitance  
trr  
=
60  
ns  
ns  
pF  
105  
61  
CJ  
VR = 200 V; f = 1 MHz  
=
IXYS reserves the right to change limits, conditions and dimensions.  
20100216a  
Data according to IEC 60747and per diode unless otherwise specified  
2010 IXYS all rights reserved  
©

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