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DO250-4M PDF预览

DO250-4M

更新时间: 2024-11-11 19:29:03
品牌 Logo 应用领域
APITECH 测试二极管
页数 文件大小 规格书
1页 77K
描述
Variable Capacitance Diode, High Frequency to Ultra High Frequency, 100pF C(T), 12V, Silicon, DO-7,

DO250-4M 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
其他特性:3% MATCHED SET OF FOUR DIODES最小击穿电压:12 V
外壳连接:ISOLATED配置:SINGLE
二极管电容容差:19.94%最小二极管电容比:7
标称二极管电容:100 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95代码:DO-7JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最小质量因数:75最大反向电流:0.01 µA
反向测试电压:10 V表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

DO250-4M 数据手册

  

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