Datasheet > DMTH8012LK3Q

DMTH8012LK3Q

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	551K
描述
80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH8012LK3Q 数据手册

DMTH8012LK3Q

0.04

0.03

0.02

0.01

3.5

I_D=1mA

2.5

V_GS=4.5V, I_D=20A

I_D=250µA

1.5

V_GS=10V, I_D=20A

0.5

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs Temperature

V_GS=0V

= 40V

= 12A

T_A=175℃

T_A=85℃

T_A=150℃

T_A=25℃

T_A=125℃

T_A=-55℃

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs Current

Q_g, TOTAL GATE CHARGE (nC)

Figure 10 Gate Charge

10000

1000

100

1000

f = 1MHz

R_DS(ON)Limited

P_W=1μs

iss

P_W=10μs

100

oss

P_W=100μs

P_W=1ms

P_W=10ms

P_W=100ms

rss

T_J(MAX)=175℃

T_C=25℃

Single Pulse

DUT on infinite heatsink

V_GS=10V

0.1

0.01

P_W=1s

0.1

100

10 15 20 25 30 35 40 45 50 55 60

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 11 Typical Junction Capacitance

V_DS, Drain-Source Voltage (V)

Figure 12. SOA, Safe Operation Area

5 of 8

www.diodes.com

September 2015

DMTH8012LK3Q

Document number: DS38062 Rev. 1 - 2

1 2 3 456 7 8

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