Datasheet > DMTH8012LK3Q

DMTH8012LK3Q

更新时间： 2023-12-06 20:11:00

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	551K
描述
80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMTH8012LK3Q 数据手册

DMTH8012LK3Q

Marking Information

TO252 (DPAK)

=Manufacturer’s Marking

H8012L = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (ex: 14 = 2014)

WW = Week Code (01 to 53)

H8012L

YYWW

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Units

Gate-Source Voltage

±20

V_GSS

T_C= +25°C

Continuous Drain Current (Note 7) V_GS= 10V

T_C= +100°C

I_D

Maximum Continuous Body Diode Forward Current (Note 7)

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Avalanche Energy, L = 60mH

I_S

I_DM

E_AS

147

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 6)

Symbol

P_D

Value

2.6

Units

Thermal Resistance, Junction to Ambient (Note 6)

Total Power Dissipation (Note 7)

°C/W

R_θJA

P_D

Thermal Resistance, Junction to Case (Note 7)

Operating and Storage Temperature Range

2.5

°C/W

°C

R_θJC

-55 to +175

T_J,T_STG

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.

2 of 8

www.diodes.com

September 2015

DMTH8012LK3Q

Document number: DS38062 Rev. 1 - 2

123 4 5 6 7 8

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