DMTH8012LK3Q
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
80
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 64V, VGS = 0V
VGS = ±20V, VDS = 0V
μA
nA
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
—
3
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 6A
VGS = 0V, IS = 25A
—
—
—
12.1
14.8
0.9
16
21
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
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—
2051
189.9
24.6
0.44
24.1
46.8
6.9
Ciss
Coss
Crss
Rg
VDS = 40V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
nS
VDS = 40V, ID = 12A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
12.2
5.8
Turn-On Delay Time
Turn-On Rise Time
6.5
VDD = 40V, VGS = 10V,
ID = 12A, RG = 1.6Ω
Turn-Off Delay Time
17.3
4.7
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
33.5
38.9
nS
nC
tRR
IF = 12A, di/dt = 100A/μs
QRR
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
3 of 8
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September 2015
© Diodes Incorporated
DMTH8012LK3Q
Document number: DS38062 Rev. 1 - 2