Datasheet > DMTH63M6LPSW

DMTH63M6LPSW

更新时间： 2023-12-06 20:11:06

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	529K
描述
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMTH63M6LPSW 数据手册

DMTH63M6LPSW

50.0

40.0

30.0

20.0

10.0

0.0

V_GS= 3.5V

V_GS= 4.0V

V_DS= 5.0V

V_GS= 3.2V

V_GS= 4.5V

V_GS= 6.0V

T_J= 175℃

V_GS= 10.0V

V_GS= 3.0V

V_GS= 2.8V

T_J= 150℃

T_J= 125℃

T_J= 85℃

T_J= 25℃

T_J= -55℃

V_GS= 2.5V

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

0.08

0.06

0.04

0.02

0.007

0.006

0.005

0.004

0.003

0.002

0.001

V_GS= 4.5V

V_GS= 10V

I_D= 20A

I_D, DRAIN-SOURCE CURRENT (A)

V_GS, GATE-SOURCE VOLTAGE (V)

Figure 3. Typical On-Resistance vs. Drain Current and Gate

Voltage

Figure 4. Typical Transfer Characteristic

2.2

0.008

V_GS= 10V

0.007

0.006

0.005

0.004

0.003

0.002

0.001

T_J= 150℃

T_J= 175℃

1.8

1.6

1.4

1.2

V_GS= 10V, I_D= 20A

T_J= 125℃

T_J= 85℃

T_J= 25℃

V_GS= 4.5V, I_D= 20A

T_J= -55℃

0.8

0.6

-50 -25

25 50 75 100 125 150 175

I_D, DRAIN CURRENT (A)

T_J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction Temperature

Figure 5. Typical On-Resistance vs. Drain Current and Junction

Temperature

3 of 7

www.diodes.com

July 2023

DMTH63M6LPSW

Document number: DS44812 Rev. 5 - 2

1 234 5 6 7

下载PDF

与DMTH63M6LPSW相关器件

型号	品牌	描述	获取价格	数据表
DMTH63M6LPSWQ	DIODES	60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMTH69M8LFVW	DIODES	60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMTH69M8LFVWQ	DIODES	60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格
DMTH8001STLW	DIODES	80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET P	获取价格
DMTH8001STLWQ	DIODES	80V 175°C N-Channel Enhancement Mode MOSFET P	获取价格
DMTH8003SPS	DIODES	80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET	获取价格