Datasheet > DMTH63M6LPSW

DMTH63M6LPSW

更新时间： 2023-12-06 20:11:06

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	529K
描述
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMTH63M6LPSW 数据手册

DMTH63M6LPSW

2.5

0.012

0.01

0.008

0.006

0.004

0.002

I_D= 1mA

V_GS= 4.5V, I_D= 20A

1.5

I_D= 250μA

V_GS= 10V, I_D= 20A

0.5

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction Temperature

-50 -25

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction Temperature

25 50 75 100 125 150 175

100000

V_GS= 0V

f = 1MHz

10000

1000

100

C_iss

T_J= 175℃

T_J= 150℃

C_oss

T_J= 125℃

T_J= 85℃

C_rss

T_J= 25℃

T_J= -55℃

0.2

0.4

0.6

0.8

1.2

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

1000

100

R_DS(ON)

Limited

P_W= 1μs

P_W= 10μs

P_W= 100μs

P_W= 1ms

P_W= 10ms

P_W= 100ms

T_J(Max)= 175℃

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

V_DS= 30V, I_D= 20A

V_GS= 10V

0.1

100

Q_g(nC)

Figure 11. Gate Charge

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

4 of 7

www.diodes.com

July 2023

DMTH63M6LPSW

Document number: DS44812 Rev. 5 - 2

1 2 345 6 7

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