Datasheet > DMTH63M6LPSW

DMTH63M6LPSW

更新时间： 2023-12-06 20:11:06

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	529K
描述
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMTH63M6LPSW 数据手册

DMTH63M6LPSW

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

±20

105

Gate-Source Voltage

V_GSS

T_C= +25°C

Continuous Drain Current, V_GS= 10V (Note 6)

I_D

T_C= +100°C

Maximum Continuous Body Diode Forward Current (Note 6)

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

Pulsed Body Diode Forward Current (10μs Pulse, Duty Cycle = 1%)

Avalanche Current, L = 1mH

105

420

I_S

I_DM

I_AS

Avalanche Energy, L = 1mH

200

E_AS

Thermal Characteristics

Characteristic

Total Power Dissipation (Note 5)

Symbol

P_D

Value

3.3

Unit

T_A= +25°C

T_C= +25°C

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

R_θJA

84.7

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

1.77

°C/W

°C

R_θJC

-55 to +175

T_J, T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition





BV_DSS

I_DSS

V_GS= 0V, I_D= 10mA

V_DS= 48V, V_GS= 0V

μA

±100

I_GSS

V_GS= ±20V, V_DS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.3



2.5

4.1

6.2

1.2

mΩ

V_GS(TH)

R_DS(ON)

V_SD



3.2

4.6

0.8

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 20A

V_GS= 4.5V, I_D= 20A

V_GS= 0V, I_S= 20A

Static Drain-Source On-Resistance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

2479

863

C_iss

C_oss

C_rss

R_g



V_DS= 30V, V_GS= 0V,

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

1.44

44.8

Ω

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 10V)

Total Gate Charge (V_GS= 4.5V)

Gate-Source Charge

Q_g

V_DD= 30V, I_D= 20A

7.7

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

10.6

7.7

Turn-On Delay Time

Turn-On Rise Time

V_DD= 30V, V_GS= 10V,

I_D= 20A, R_g= 3.3Ω

Turn-Off Delay Time

34.5

24.5

43.6

52.5

t_D(OFF)

t_F

Turn-Off Fall Time

Body Diode Reverse-Recovery Time

t_RR

I_F= 20A, di/dt = 100A/μs

Body Diode Reverse-Recovery Charge

Q_RR

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

2 of 7

www.diodes.com

July 2023

DMTH63M6LPSW

Document number: DS44812 Rev. 5 - 2

123 4 5 6 7

中文翻译

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