Datasheet > DMTH45M5LPSW

DMTH45M5LPSW

更新时间： 2023-12-06 20:11:39

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美台 - DIODES		/
页数	文件大小	规格书
8页	588K
描述
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMTH45M5LPSW 数据手册

DMTH45M5LPSW

2.5

0.012

0.01

0.008

0.006

0.004

0.002

V_GS= 4.5V, I_D= 15A

I_D= 1mA

1.5

I_D= 250μA

V_GS= 10V, I_D= 25A

0.5

-50 -25

75 100 125 150 175

-50 -25

75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

Figure 7. On-Resistance Variation with Junction

Temperature

10000

1000

100

f = 1MHz

V_GS= 0V

C_iss

T_J= 175℃

T_J= 150℃

T_J= 125℃

T_J= 85℃

T_J= 25℃

T_J= -55℃

C_oss

C_rss

0.3

0.6

0.9

1.2

1.5

V_DS, DRAIN-SOURCE VOLTAGE (V)

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

1000

100

R_DS(ON)

Limited

P_W= 1µs

P_W= 10µs

P_W= 100µs

V_DS= 20V, I_D= 25A

T_J(Max)= 175℃

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

P_W= 1ms

P_W= 10ms

P_W= 100ms

V_GS= 10V

0.1

100

Q_g(nC)

Figure 11. Gate Charge

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

5 of 8

www.diodes.com

August 2022

DMTH45M5LPSW

Document number: DS44405 Rev. 3 - 2

1 2 3 456 7 8

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