Datasheet > DMTH45M5LPSW

DMTH45M5LPSW

更新时间： 2023-12-06 20:11:39

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描述
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH45M5LPSW 数据手册

DMTH45M5LPSW

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

—

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 32V, V_GS= 0V

V_GS= ±20V, V_DS= 0V

μA

±100

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1.2

—

3.6

2.3

5.5

7.9

1.2

mΩ

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= 250μA

V_GS= 10V, I_D= 25A

V_GS= 4.5V, I_D= 15A

V_GS= 0V, I_S= 25A

Static Drain-Source On-Resistance

5.4

Diode Forward Voltage

0.82

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

978

630

—

C_iss

C_oss

C_rss

R_g

V_DS= 20V, V_GS= 0V

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

1.5

13.9

6.3

3.6

0.9

2.8

3.1

15.6

5.5

Ω

V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= 10V)

Total Gate Charge (V_GS= 4.5V)

Gate-Source Charge

Q_g

V_DS= 20V, I_D= 25A

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

V_GS= 10V, V_DD= 20V

R_g= 3.5Ω, I_D= 25A

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

t_RR

I_F= 25A, dI/dt = 100A/μs

Q_RR

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

3 of 8

www.diodes.com

August 2022

DMTH45M5LPSW

Document number: DS44405 Rev. 3 - 2

1 234 5 6 7 8

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