DMT6009LK3
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
60
Unit
V
Gate-Source Voltage
±16
V
VGSS
TA = +25C
Continuous Drain Current (Note 5) VGS = 10V
TA = +70C
TC = +25C
Continuous Drain Current (Note 6) VGS = 10V
TC = +70C
13.3
10.6
A
A
ID
ID
57
46
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
80
90
A
A
IS
IDM
IAS
EAS
20.3
20.6
A
Avalanche Energy, L=0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
2.6
47
Unit
W
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
50
PD
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
2.5
°C/W
°C
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
60
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 1mA
VDS = 48V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
μA
nA
-
±100
IGSS
VGS = ±16V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.7
1.4
8.3
9.6
0.9
2
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 13.5A
VGS = 4.5V, ID = 11.5A
VGS = 0V, IS = 20A
-
-
-
10
mΩ
mΩ
V
Static Drain-Source On-Resistance
12.8
1.2
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1,925
438
41
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 30V, VGS = 0V,
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
1.7
Ω
VDS = 0V, VGS = 0V, f = 1MHz
15.6
33.5
4.7
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 30V, ID = 13.5A
Qgs
Qgd
tD(ON)
tR
5.3
Gate-Drain Charge
4.5
Turn-On Delay Time
8.6
Turn-On Rise Time
VDD = 30V, VGS = 10V,
RG = 6Ω, ID = 13.5A
35.9
15.7
18.2
33.1
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
IF = 13.5A, di/dt = 400A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 6
www.diodes.com
December 2015
© Diodes Incorporated
DMT6009LK3
Document number: DS38207 Rev. 3 - 2
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