Datasheet > DMT6008LFG

DMT6008LFG

更新时间： 2024-11-10 01:19:51

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
6页	275K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DMT6008LFG 数据手册

DMT6008LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features and Benefits

•

Low R_DS(ON)– Ensures on State Losses Are Minimized

_Dmax

V_(BR)DSS

R_DS(ON)max

Excellent Q_gdx R_{DS (ON)}Product (FOM)

T_C= +25°C

60A

Advanced Technology for DC/DC Converts

Small Form Factor Thermally Efficient Package Enables Higher

Density End Products

7.5mΩ @ V_GS= 10V

11.5mΩ @ V_GS= 4.5V

60V

49A

•

Occupies Just 33% of the Board Area Occupied by SO-8 Enabling

Smaller End Product

Description

This MOSFET has been designed to minimize the on-state resistance

(R_DS(ON)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

•

100% UIS (Avalanche) rated

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Applications

•

Synchronous Rectifier

Mechanical Data

Backlighting

Power Management Functions

DC-DC Converters

•

Case: POWERDI^®3333-8

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

•

Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approximate)

•

Pin 1

ESD PROTECTED

Gate Protection

Diode

Top View

Bottom View

Internal Schematic

Ordering Information (Note 4)

Part Number

DMT6008LFG-7

DMT6008LFG-13

Case

Packaging

2,000/Tape & Reel

3,000/Tape & Reel

POWERDI3333-8

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

S6E = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 13 = 2013)

WW = Week code (01 ~ 53)

1 of 6

www.diodes.com

July 2014

DMT6008LFG

Document number: DS36680 Rev. 2 - 2

12 3 4 5 6

中文翻译

下载PDF

与DMT6008LFG相关器件

型号	品牌	获取价格	描述	数据表
DMT6008LFG_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT6008LFG-13	DIODES	获取价格	Power Field-Effect Transistor
DMT6008LFG-7	DIODES	获取价格	Power Field-Effect Transistor
DMT6009LCT	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMT6009LFG	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT6009LFG-7	DIODES	获取价格	Power Field-Effect Transistor,
DMT6009LK3	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT6009LPS	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT6009LSS	DIODES	获取价格	60V N-CHANNEL ENHANCEMENT MODE MOSFET
DMT6009LSS-13	DIODES	获取价格	Power Field-Effect Transistor,

与DMT6008LFG相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

22
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

21
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

47
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

39

产品中心

服务支持

精选活动

关于我们

帮助中心

DMT6008LFG

DMT6008LFG 数据手册

与DMT6008LFG相关器件

与DMT6008LFG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

DMT6008LFG

DMT6008LFG 数据手册

与DMT6008LFG相关器件

与DMT6008LFG相关文章

您还可以找

您在本页遇到什么问题？