Datasheet > DMS3016SSS-13

DMS3016SSS-13

更新时间： 2024-02-08 04:00:17

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
6页	160K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE

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中文翻译

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数据手册

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DMS3016SSS-13 数据手册

DMS3016SSS

10,000

1,000

10,000

1,000

f = 1MHz

= 125°C

iss

= 85°C

100

oss

rss

100

= 25°C

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

Fig. 9 Typical Total Capacitance

= 15V

= 12.7A

10 15 20 25 30 35 40 45

Q_g, TOTAL GATE CHARGE (nC)

Fig. 11 Gate-Charge Characteristics

D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.9

D = 0.05

D = 0.02

(t) = r(t) * R

θJA

= 80°C/W

θJA

0.01

P(pk)

D = 0.01

D = 0.005

- T = P * R (t)

A θJA

Duty Cycle, D = t /t

D = Single Pulse

0.001

0.0001

0.001

0.01

0.1

100

1,000

t₁, PULSE DURATION TIME (s)

Fig. 12 Transient Thermal Response

4 of 6

www.diodes.com

September 2010

DMS3016SSS

Document number: DS32266 Rev. 3 - 2

1 2 345 6

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