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DMS3019SSD PDF预览

DMS3019SSD

更新时间: 2022-10-27 10:46:02
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
10页 197K
描述
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMS3019SSD 数据手册

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DMS3019SSD  
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
DIOFET utilize a unique patented process to monolithically  
integrate a MOSFET and a Schottky in a single die to deliver:  
Case: SO-8  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Low RDS(on) – minimizes conduction loss  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram Below  
Weight: 0.072 grams (approximate)  
Low VSD – reducing the losses due to body diode  
construction  
Low Qrr – lower Qrr of the integrated Schottky reduces body  
diode switching losses  
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-  
through or cross conduction currents at high frequencies  
Avalanche rugged – IAR and EAR rated  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
Q1  
D1  
Q2  
D2  
D2  
G2  
D2  
G1  
S1  
S2/D1  
S2/D1  
S2/D1  
G1  
G2  
S1  
S2  
N-Channel MOSFET +  
Integrated Schottky Diode  
N-Channel MOSFET  
Top View  
Internal Schematic  
Top View  
Ordering Information (Note 3)  
Part Number  
DMS3019SSD-13  
Case  
SO-8  
Packaging  
2500 / Tape & Reel  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
Top View  
8
5
Logo  
S3019SD  
YY WW  
Part no.  
Week: 01 ~ 53  
Year: “09” = 2009  
1
4
1 of 10  
www.diodes.com  
October 2010  
© Diodes Incorporated  
DMS3019SSD  
Document number: DS35053 Rev. 2 - 2  

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