DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Low RDS(on) – minimizes conduction loss
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
•
•
•
•
Low VSD – reducing the losses due to body diode
construction
Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
Avalanche rugged – IAR and EAR rated
•
•
•
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Q1
D1
Q2
D2
D2
G2
D2
G1
S1
S2/D1
S2/D1
S2/D1
G1
G2
S1
S2
N-Channel MOSFET +
Integrated Schottky Diode
N-Channel MOSFET
Top View
Internal Schematic
Top View
Ordering Information (Note 3)
Part Number
DMS3019SSD-13
Case
SO-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
S3019SD
YY WW
Part no.
Week: 01 ~ 53
Year: “09” = 2009
1
4
1 of 10
www.diodes.com
October 2010
© Diodes Incorporated
DMS3019SSD
Document number: DS35053 Rev. 2 - 2