Datasheet > DMPH4011SK3

DMPH4011SK3

更新时间： 2023-12-06 20:11:07

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描述
175°C 40V P-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMPH4011SK3 数据手册

DMPH4011SK3

2.5

V_GS= -4.5V, I_D= -9.8A

I_D= 1mA

1.5

I_D= 250μA

V_GS= -10V, I_D= -9.8A

0.5

-50 -25

25 50 75 100 125 150 175

-50 -25

25 50 75 100 125 150 175

T_J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Temperature

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

10000

f = 1MHz

V_GS= 0V

C_iss

1000

C_oss

T_J= 175^oC

T_J= 85^oC

T_J= 150^oC

C_rss

T_J= 25^oC

T_J= 125^oC

T_J= -55^oC

100

0.3

0.6

0.9

1.2

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

V_SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

1000

100

R_DS(ON)

Limited

P_W= 1µs

P_W= 10µs

P_W= 100µs

P_W= 1ms

T_J(Max)= 175℃

T_C= 25℃

Single Pulse

DUT on Infinite

Heatsink

P_W= 10ms

P_W= 100ms

V_DS= -20V, I_D= -9.8A

V_GS= -10V

0.1

10 20 30 40 50 60 70 80 90 100 110

Q_g(nC)

0.1

100

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

5 of 8

www.diodes.com

May 2021

DMPH4011SK3

Document number: DS40905 Rev. 3 - 2

1 2 3 456 7 8

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