Datasheet > DMPH4011SK3

DMPH4011SK3

更新时间： 2023-12-06 20:11:07

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页数	文件大小	规格书
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描述
175°C 40V P-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMPH4011SK3 数据手册

DMPH4011SK3

Electrical Characteristics (@ T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Source Leakage

Symbol

Min

Typ

Max

Unit

Test Condition

-40





BV_DSS

I_DSS







-1

V_GS= 0V, I_D= -250µA

µA

V_DS= -32V, V_GS= 0V

I_GSS

100

V_GS= 20V, V_DS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-1.0



6.5

-2.5

11

m

V_GS(TH)

R_DS(ON)

V_SD

V_DS= V_GS, I_D= -250µA

V_GS= -10V, I_D= -9.8A

V_GS= -4.5V, I_D= -9.8A

V_GS= 0V, I_S= -1A

Static Drain-Source On-Resistance

9.1

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-0.7

-1



4497

555

416

11.7

C_iss

C_oss

C_rss

R_g



















V_DS= -20V, V_GS= 0V

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance



V_DS= 0V, V_GS= 0V, f = 1MHz

Total Gate Charge (V_GS= -4.5V)

Total Gate Charge (V_GS= -10V)

Gate-Source Charge

Q_g

104

Q_g

nC

V_DS= -20V, I_D= -9.8A

Q_gs

Q_gd

t_D(ON)

t_R

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

7.8

328

147

V_GS= -10V, V_DD= -20V,

R_g= 6, I_D= -1A

Turn-Off Delay Time

t_D(OFF)

t_F

Turn-Off Fall Time

Reverse Recovery Time

Reverse Recovery Charge

t_RR

I_F= -9.8A, di/dt = -100A/µs

Q_RR

Notes:

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

3 of 8

www.diodes.com

May 2021

DMPH4011SK3

Document number: DS40905 Rev. 3 - 2

1 234 5 6 7 8

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