Datasheet > DMPH4011SK3

DMPH4011SK3

更新时间： 2023-12-06 20:11:07

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
8页	722K
描述
175°C 40V P-CHANNEL ENHANCEMENT MODE MOSFET

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中文翻译

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数据手册

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DMPH4011SK3 数据手册

DMPH4011SK3

Marking Information

= Manufacturer’s Marking

PH4011S = Product Type Marking Code

YYWW = Date Code Marking

H4015S

YYWW

YY = Year (ex: 21 = 2021)

WW = Week (01 to 53)

Maximum Ratings (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

-40

Unit

Gate-Source Voltage

±20

V_GSS

Steady

State

T_C= +25°C

T_C= +100°C

-79

-56

Continuous Drain Current (Note 6) V_GS= -10V

I_D

-316

-79

Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)

Maximum Body Diode Forward Current (Note 6)

Avalanche Current, L = 1mH

I_DM

I_S

-20

I_AS

E_AS

Avalanche Energy, L = 1mH

202

Thermal Characteristics (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

3.7

Unit

Total Power Dissipation (Note 5)

TA= +25°C

Steady State

P_D

R_JA

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

°C/W

115

T_C= +25°C

P_D

Thermal Resistance, Junction to Case (Note 6)

Operating and Storage Temperature Range

1.3

°C/W

°C

R_JC

-55 to +175

T_J,T_STG

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

2 of 8

www.diodes.com

May 2021

DMPH4011SK3

Document number: DS40905 Rev. 3 - 2

123 4 5 6 7 8

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