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DMP1022UFDF-7 PDF预览

DMP1022UFDF-7

更新时间： 2024-01-24 23:58:02
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
6页 425K
描述
Small Signal Field-Effect Transistor, 9.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, U-DFN2020-6, 6 PIN

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DMP1022UFDF-7 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：SMALL OUTLINE, S-PDSO-N6Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：14 weeks
风险等级：2.17其他特性：HIGH RELIABILITY
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：12 V最大漏极电流 (ID)：9.5 A
最大漏源导通电阻：0.026 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：S-PDSO-N6JESD-609代码：e4
湿度敏感等级：1元件数量：1
端子数量：6工作模式：ENHANCEMENT MODE
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL参考标准：AEC-Q101
表面贴装：YES端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：NO LEAD端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DMP1022UFDF-7 数据手册

 浏览型号DMP1022UFDF-7的Datasheet PDF文件第2页浏览型号DMP1022UFDF-7的Datasheet PDF文件第3页浏览型号DMP1022UFDF-7的Datasheet PDF文件第4页浏览型号DMP1022UFDF-7的Datasheet PDF文件第5页浏览型号DMP1022UFDF-7的Datasheet PDF文件第6页 
DMP1022UFDF  
12V P-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
0.6mm profile – ideal for low profile applications  
PCB footprint of 4mm2  
ID max  
V(BR)DSS  
RDS(ON) max  
TA = +25°C  
Low Gate Threshold Voltage  
-9.5A  
-8.5A  
-7.2A  
-6.6A  
14.8mΩ @ VGS = -4.5V  
19mΩ @ VGS = -2.5V  
26mΩ @ VGS = -1.8V  
32mΩ @ VGS = -1.5V  
Fast Switching Speed  
-12V  
ESD Protected Gate  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
Description  
Mechanical Data  
This MOSFET is designed specifically for use in battery management  
applications.  
Case: U-DFN2020-6  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish – NiPdAu over Copper Leadframe.  
e4  
Solderable per MIL-STD-202, Method 208  
Weight: 0.0065 grams (Approximate)  
D
U-DFN2020-6  
G
ESD PROTECTED  
Gate Protection  
Diode  
S
Pin Out  
Internal Schematic  
Top View  
Bottom View  
Bottom View  
Ordering Information (Note 4)  
Part Number  
DMP1022UFDF-7  
DMP1022UFDF-13  
Case  
U-DFN2020-6  
U-DFN2020-6  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
PU = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: A = 2013)  
PU  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2013  
2014  
2015  
2016  
2017  
2018  
2019  
2020  
2021  
2022  
Code  
A
B
C
D
E
F
G
H
I
J
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
1 of 6  
www.diodes.com  
October 2015  
© Diodes Incorporated  
DMP1022UFDF  
Datasheet number: DS36624 Rev. 5 - 2  
123456

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