Datasheet > DMN52D0UVA

DMN52D0UVA

更新时间： 2023-12-06 20:11:01

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描述
50V N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMN52D0UVA 数据手册

DMN52D0UVA

1.5

1.2

0.9

0.6

0.3

2.5

V_GS= 1.8V, I_D= 50mA

V_GS= 2.5V, I_D= 50mA

I_D= 1mA

1.5

I_D= 250μA

V_GS= 5.0V, I_D= 50mA

0.5

-50 -25

75 100 125 150

-50 -25

75 100 125 150

T_J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

Figure 7. On-Resistance Variation with Junction

Temperature

100

0.8

0.6

0.4

0.2

f = 1MHz

C_iss

T_J= 150℃

T_J= -55℃

T_J= 25℃

T_J= 85℃

C_oss

T_J= 125℃

C_rss

0.3

0.6

0.9

1.2

1.5

V_SD, SOURCE-DRAIN VOLTAGE (V)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

Figure 9. Diode Forward Voltage vs. Current

R_DS(ON)

Limited

P_W= 100µs

0.1

P_W= 1ms

P_W= 10ms

P_W= 100ms

P_W= 1s

P_W= 10s

V_DS= 25V, I_D= 50mA

T_J(Max)= 150℃

0.01

0.001

T_A= 25℃

Single Pulse

DUT on 1*MRP Board

V_GS= 5V

0.1

100

0.5

1.5

Q_g(nC)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

Figure 11. Gate Charge

5 of 8

www.diodes.com

December 2022

DMN52D0UVA

Document number: DS44807 Rev. 3 - 2

1 2 3 456 7 8

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