Datasheet > DMN3061LCA3

DMN3061LCA3

更新时间： 2023-12-06 20:11:16

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	442K
描述
N-CHANNEL ENHANCEMENT MODE MOSFET

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数据手册

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DMN3061LCA3 数据手册

DMN3061LCA3

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

Unit

Gate-Source Voltage

V_GSS

Steady

T_A= +25°C

T_A= +70°C

T_A= +25°C

T_A= +70°C

4.6

3.7

Continuous Drain Current (Note 5) V_GS= 8V

State

I_D

Steady

Continuous Drain Current (Note 5) V_GS= 4.5V

State

4.4

3.5

I_D

Pulsed Drain Current (Note 6)

I_DM

Thermal Characteristics

Characteristic

Power Dissipation (Note 7)

Symbol

P_D

Value

1.12

Unit

113.4

1.88

°C/W

Thermal Resistance, Junction to Ambient @T_A= +25°C (Note 7)

Power Dissipation (Note 5)

R_θJA

P_D

66.4

°C/W

°C

Thermal Resistance, Junction to Ambient @T_A= +25°C (Note 5)

Operating and Storage Temperature Range

R_θJA

-55 to +150

T_J, T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

—

100

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

V_DS= 24V, V_GS= 0V

V_GS= 10V, V_DS= 0V

Zero Gate Voltage Drain Current T_J= +25°C

Gate-Source Leakage

I_GSS

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

0.65

—

0.85

1.1

V_GS(TH)

V_DS= V_GS, I_D= 250μA

V_GS= 8V, I_D= 0.5A

V_GS= 4.5V, I_D= 0.5A

V_GS= 2.5V, I_D= 0.5A

V_GS= 1.8V, I_D= 0.5A

V_GS= 0V, I_S= 0.5A

—

Static Drain-Source On-Resistance

mΩ

R_DS(ON)

—

110

160

0.9

—

104

0.7

2.4

7.1

Diode Forward Voltage

Reverse Recovery Charge

Reverse Recovery Time

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

V_SD

Q_RR

t_RR

—

V_DD= 15V, I_F= 0.5A,

di/dt = 300A/μs

—

126

—

C_iss

C_oss

C_rss

R_g

V_DS= 15V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Series Gate Resistance

Total Gate Charge

4.5

3.7

1.4

0.2

4.3

1.9

9.1

5.1

f = 1MHz, V_GS= 0V, V_DS= 0V

Q_g

Gate-Source Charge

Gate-Drain Charge

Q_gs

V_GS= 4.5V, V_DS= 15V,

I_D= 0.5A

Q_gd

Q_g(TH)

t_D(ON)

t_R

Gate Charge at V_TH

Turn-On Delay Time

Turn-On Rise Time

V_DS= 15V, V_GS= 4.5V,

Turn-Off Delay Time

R_g= 2Ω, I_D= 0.5A

t_D(OFF)

t_F

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 material with 1inch²(6.45cm²), 2-oz. (0.071mm thick) Cu.

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

2 of 7

www.diodes.com

December 2020

DMN3061LCA3

Document number: DS42490 Rev. 2 - 2

123 4 5 6 7

中文翻译

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与DMN3061LCA3相关器件

型号	品牌	获取价格	描述	数据表
DMN3061S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3061SQ	DIODES	获取价格	N-Channel Enhancement Mode MOSFET
DMN3061SVT	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3061SVTQ	DIODES	获取价格	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3061SW	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3061SWQ	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3065LW	DIODES	获取价格	Low On-Resistance
DMN3065LW_15	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN3065LW-13	DIODES	获取价格	Low On-Resistance
DMN3065LW-7	DIODES	获取价格	Low On-Resistance

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