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DMN3020UFDFQ PDF预览

DMN3020UFDFQ

更新时间: 2023-12-06 20:11:31
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
8页 564K
描述
30V N-CHANNEL ENHANCEMENT MODE MOSFET

DMN3020UFDFQ 数据手册

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DMN3020UFDFQ  
30.0  
25.0  
20.0  
15.0  
10.0  
5.0  
25  
20  
15  
10  
5
VDS = 5V  
VGS = 4.5V  
VGS = 3.0V  
VGS = 2.5V  
VGS = 1.8V  
VGS = 1.5V  
85oC  
25oC  
125oC  
150oC  
VGS = 1.2V  
2.5  
-55oC  
0
0.0  
0.5  
0.8  
1.1  
1.4  
1.7  
2
0
0.5  
1
1.5  
2
3
VDS, DRAIN-SOURCE VOLTAGE (V)  
Figure 1. Typical Output Characteristic  
VGS, GATE-SOURCE VOLTAGE (V)  
Figure 2. Typical Transfer Characteristic  
0.022  
0.02  
0.1  
0.08  
0.06  
0.04  
0.02  
0
ID = 4.5A  
VGS = 2.5V  
0.018  
0.016  
0.014  
0.012  
ID = 2.0A  
VGS = 4.5V  
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)  
ID, DRAIN-SOURCE CURRENT (A)  
Figure 4. Typical Transfer Characteristic  
Figure 3. Typical On-Resistance vs. Drain Current and  
Gate Voltage  
0.04  
1.8  
1.6  
1.4  
1.2  
1
VGS = 4.5V  
VGS = 4.5V, ID = 4.5A  
0.035  
0.03  
0.025  
0.02  
0.015  
0.01  
0.005  
0
150oC  
125oC  
85oC  
25oC  
VGS = 2.5V, ID = 3.5A  
-55oC  
0.8  
0.6  
0
5
10  
15  
20  
25  
30  
-50 -25  
0
25  
50  
75 100 125 150  
ID, DRAIN CURRENT (A)  
TJ, JUNCTION TEMPERATURE ()  
Figure 6. On-Resistance Variation with Temperature  
Figure 5. Typical On-Resistance vs. Drain Current and  
Temperature  
4 of 8  
www.diodes.com  
August 2021  
© Diodes Incorporated  
DMN3020UFDFQ  
Datasheet number: DS43476 Rev. 2 - 2  

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